Panasonic MA6Z718 Specification Sheet

Schottky Barrier Diodes (SBD)
MA6Z718
Silicon epitaxial planar type
For switching
■ Features
• Three isolated elements are contained in one package, allowing
high-density mounting
• Forward voltage V
, optimum for low voltage rectification
F
• Optimum for high frequency rectification because of its short
reverse recovery time t
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
*
Peak forward current
*
Forward current
Junction temperature
Storage temperature
Note) * : Value for single diode
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
Pulse Generator
(PG-10N)
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA6S718)
rr
= 25°C
a
Symbol Rating
V 30
R
V 30
RM
I 150
FM
I 30
F
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F1 F
V I
F2 F
I V
R
C V
t
t I
rr F
I
rr
η
V
R
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω = 50 Ω
R
Note) The part number in the parenthesis shows conventional part number.
i
Unit
1: Anode 1
V
2: Anode 2
3: Anode 3
V
EIAJ: SC-88
mA
Marking Symbol: M2N
mA
°C
Internal Connection
°C
Conditions
= 1 mA
= 30 mA
= 30 V
R
= 1 V, f = 1 MHz
R
= I = 10 mA
R
= 1 mA, R = 100 Ω
L
= 3 V , f = 30 MHz
IN (peak)
= 3.9 kΩ, C = 10 pF
L
4. * : t measurement circuit
rr
Input Pulse
t
t
r p
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00114BED
2.0 ±0.1
(0.65)(0.65)
6 5 4
1 2 3
0.2 ±0.05
5˚
4: Cathode 3
5: Cathode 2
6: Cathode 1
SMini6-F1 Package
6 5 4
1 2 3
Min Typ Max
0.4
1.0
1.5
1.0
65
Output Pulse
t
rr
I
F
t
= 1 mA
I
rr
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
Unit: mm
0.7 ±0.1
+0.10
0.16
–0.06
Unit
V
µA
1
pF
ns
%
1