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Panasonic MA6J786X Specification Sheet

Schottky barrier diodes (sbd) silicon epitaxial planar type

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Schottky Barrier Diodes (SBD)
MA6J786X
Silicon epitaxial planar type
For high speed switching circuits
 Overview
MA6J786X is optimal for general circuit supplies.
The assembly of 3 MA3X786 elements in parallel in one package.
 Features
 Forward current (Average) I
F(AV)
 Short reverse recovery time t
 Low forward voltage V
and good rectification efficiency
F
 Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current
from the operating equipment.
3. * : t
measurement circuit
rr
Pulse Generator
(PG-10N)
R
= 50 Ω
s
Publication date: August 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 100 mA rectification is possible
, optimum for high-frequency rectification
rr
= 25°C
a
Symbol
Rating
V
30
R
V
30
RM
I
100
F(AV)
I
300
FM
*
I
1
FSM
T
125
j
T
-55 to +125
stg
= 25°C±3°C
a
Symbol
V
I
= 100 mA
F1
F
I
V
= 30 V
R
R
C
V
= 0, f = 1 MHz
t
R
I
= I
F
t
rr
R
= 100 W
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
 Package
 Code
SMini6-F1
 Pin Name
 Marking Symbol: M8B
Unit
V
 Internal Connection
V
mA
mA
A
°C
°C
Conditions
= 100 mA, I
= 0.1 × I
,
R
rr
R
Input Pulse
t
t
r
p
t
10%
90%
V
R
t
= 2 µs
p
t
= 0.35 ns
r
δ = 0.05
SKH00226BED
1: Anode 1
4: Cathode 3
2: Anode 2
5: Cathode 2
3: Anode 3
6: Cathode 1
(C1)
(C2)
(C3)
6
5
4
1
2
3
(A1)
(A2)
(A3)
Min
Typ
Max
0.55
15
20
1.0
Output Pulse
t
rr
I
F
t
I
= 10 mA
rr
I
= I
= 100 mA
F
R
R
= 100 Ω
L
Unit
V
mA
pF
ns
1

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Summary of Contents for Panasonic MA6J786X

  • Page 1 MA6J786X Silicon epitaxial planar type For high speed switching circuits  Overview MA6J786X is optimal for general circuit supplies. The assembly of 3 MA3X786 elements in parallel in one package.  Features  Forward current (Average) I = 100 mA rectification is possible F(AV) ...
  • Page 2 This product complies with the RoHS Directive (EU 2002/95/EC). MA6J786X SMini6-F1 (0.65) ±0.1 (0.65) ±0.05 SKH00226BED Unit: mm ±0.1 +0.10 0.16 −0.06...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.