Switching Diodes
MA6X121
Silicon epitaxial planar type
For switching circuit
■ Features
• Three isolated elements contained in one package, allowing high-
density mounting
• Short reverse recovery time t
• Small terminal capacitance C
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
* 1
Forward current
* 1
Peak forward current
Non-repetitive peak forward
* 1, 2
surge current
Junction temperature
Storage temperature
Note) * 1: Value for single diode
* 2: t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t
measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA121)
rr
t
= 25°C
a
Symbol
Rating
V
80
R
V
80
RM
I
100
F
I
225
FM
I
500
FSM
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V
I
F
F
V
I
R
R
I
V
R
R
C
V
t
R
= 10 mA, V
t
I
rr
F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
10˚
Unit
V
V
mA
mA
EIAJ: SC-74
mA
Marking Symbol: M2D
°C
Internal Connection
°C
Conditions
= 100 µA
= 75 V
= 0 V, f = 1 MHz
= 6 V
R
= 0.1 I
= 100 Ω
, R
R
L
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00051BED
+0.20
2.90
–0.05
1.9
±0.1
(0.95)
(0.95)
4
5
6
3
2
1
+0.10
0.30
–0.05
+0.10
0.50
–0.05
Mini6-G1 Package
4
5
6
3
2
1
Min
Typ
Max
1.2
80
100
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr
R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
1: Cathode 1
2: Cathode 2
3: Cathode 3
4: Anode 3
5: Anode 2
6: Anode 1
Unit
V
V
nA
2
pF
3
ns
1