Switching Diodes
MA6X124
Silicon epitaxial planar type
For switching circuit
■ Features
• Four isolated elements contained in one package, allowing high-
density mounting
• Centrosymmetrical wiring, allowing to free from the taping direction
• Short reverse recovery time t
• Small terminal capacitance C
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
* 1
Forward current
* 1
Peak forward current
Non-repetitive peak forward
* 1, 2
surge current
Junction temperature
Storage temperature
Note) * 1: Value for single diode
* 2: t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t
measurement circuit
rr
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA124)
rr
t
= 25°C
a
Symbol
Rating
V
80
R
V
80
RM
I
100
F
I
225
FM
I
500
FSM
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V
I
F
F
= 100 µA
V
I
R
R
= 75 V
I
V
R
R
= 0 V, f = 1 MHz
C
V
t
R
= 10 mA, V
t
I
rr
F
= 0.1 I
I
rr
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
SKF00054BED
(0.95) (0.95)
4
3
+0.10
0.30
–0.05
10˚
Unit
V
1: Anode 1
V
2: Cathode 1, 2, 3, 4
3: Anode 2
mA
EIAJ: SC-74
mA
Marking Symbol: M2C
mA
Internal Connection
°C
°C
Conditions
= 6 V
R
= 100 Ω
, R
R
L
Input Pulse
t
t
p
r
t
10%
I
F
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
Unit : mm
+0.20
2.90
–0.05
+0.10
0.16
1.9
±0.1
–0.06
5
6
2
1
4: Anode 3
5: Cathode 1, 2, 3, 4
6: Anode 4
Mini6-G2 Package
4
5
6
3
2
1
Min
Typ
Max
1.2
80
100
2
3
Output Pulse
t
rr
t
= 0.1 I
I
rr
R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Unit
V
V
nA
pF
ns
1