Harman Kardon AVR 151/230C Service Manual page 44

Harman Kardon
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ Collector to Base voltage
Ｃ Ｂ Ｏ
Ｖ Emitter to Base voltage
Ｅ Ｂ Ｏ
Collector to Emitter voltage
Ｖ
Ｃ Ｅ Ｏ
Ｉ Collector current
Ｃ
Ｉ Peak Collector current
Ｃ Ｍ
Collector dissipation(Ta=25℃)
Ｐ
Ｃ
Ｔ ｊ Junction temperature
Ｔ ｓ ｔ ｇ Storage temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ C to E break down voltage
（ Ｂ Ｒ ） Ｃ Ｅ Ｏ
Collector cut off current
Ｉ
Ｃ Ｂ Ｏ
ｈ DC forward current gain
Ｆ Ｅ
Ｖ C to E saturation voltage
Ｃ Ｅ （ ｓ ａ ｔ ）
Input on voltage
Ｖ
Ｉ （ ＯＮ ）
Ｖ Input off voltage
Ｉ （ ＯＦ Ｆ ）
Ｒ Input resistance
１
Resistance ratio
Ｒ ／Ｒ
２ １
ｆ Gain band width product
Ｔ
600
500
400
300
200
100
0
0 25
Ｒ Ｔ １ Ｎ １ ４ ４ Ｘ SERIES
PARAMETER
PARAMETER
COLLECTOR DISSIPATION
VS AMBIENT TEMPERTURE
RT1N144S
RT1N144C
RT1N144M
RT1N144U
RT1N144T2
50 75 100 125 150
AMBIENT TEMPERTURE Ta (℃)
ISAHAYA ELECTRONICS CORPORATION
RT1N144T2 RT1N144U
125（ ※） 150
+125
-55〜+125
（ ※） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION
I =100μA， R =∞
C BE
V =50V， I =0
CB E
V =5V， I =5mA
CE C
I =10mA， I =0.5mA
C B
V =0.2V， I =5mA
CE C
V =5V， I =100μA
CE C
V =6V， I =-10mA
CE E
175
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
RATING
RT1N144M RT1N144C
50
6
50
100
200
200
+150
-55〜+150
MIN
50
50
0.4
7.0
4.2
AVR 151 Service Manual
〈 Transistor〉
UNIT
RT1N144S
V
V
V
mA
mA
450 mW
℃
℃
LIMIT
UNIT
TYP MAX
V
0.1
μA
−
0.1 0.3 V
1.0 1.8 V
0.7 V
10 13 kΩ
4.7 5.1
200 MHz
Page 44 of 131