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harman/kardon
FQP7N80C/FQPF7N80C
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
G
D
S
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source Voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation (T
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum lead temperature for soldering purposes,
T
L
1/8 from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink Typ.
θJS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2003 Fairchild Semiconductor Corporation
TO-220
D
G
S
FQP Series
T
= 25°C unless otherwise noted
C
Parameter
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
= 25°C)
C
- Derate above 25°C
Parameter
MAS 100 / MAS 110 / MAS 1 Service Manual
Features
• 6.6A, 800V, R
= 1.9Ω @V
DS(on)
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G
TO-220F
FQPF Series
FQP7N80C
FQPF7N80C
800
6.6
4.2
26.4
(Note 1)
± 30
580
(Note 2)
6.6
(Note 1)
16.7
(Note 1)
4.5
(Note 3)
167
1.33
-55 to +150
300
FQP7N80C
FQPF7N80C
0.75
0.5
62.5
QFET
TM
= 10 V
GS
D
{ { { {
{ { { {
{ { { {
{ { { {
{ { { {
{ { { {
S
Units
V
6.6 *
A
4.2 *
A
26.4 *
A
V
mJ
A
mJ
V/ns
56
W
0.44
W/°C
°C
°C
Units
2.25
°C/W
--
°C/W
62.5
°C/W
Rev. A, April 2003
Page 27 of 57
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