Harman Kardon MAS 110 Service Manual page 26

harman/kardon
FDP20N50 / FDPF20N50
500V N-Channel MOSFET
Features
• 20A, 500V, R = 0.23: @V
DS(on)
• Low gate charge ( typical 45.6 nC)
• Low C ( typical 27 pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G
D S
Absolute Maximum Ratings
Symbol
V Drain-Source Voltage
DSS
I Drain Current
D
I Drain Current
DM
V Gate-Source voltage
GSS
E Single Pulsed Avalanche Energy
AS
I Avalanche Current
AR
E Repetitive Avalanche Energy
AR
dv/dt Peak Diode Recovery dv/dt
P Power Dissipation
D
T T Operating and Storage Temperature Range
J, STG
T Maximum Lead Temperature for Soldering Purpose,
L
1/8" from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R Thermal Resistance, Junction-to-Case
TJC
R Thermal Resistance, Case-to-Sink Typ.
TCS
R Thermal Resistance, Junction-to-Ambient
TJA
©2007 Fairchild Semiconductor Corporation
FDP20N50 / FDPF20N50 Rev. B
= 10 V
GS
TO-220
G
FDP Series
Parameter
- Continuous (T = 25qC)
C
- Continuous (T = 100qC)
C
- Pulsed
(T = 25qC)
C
- Derate above 25qC
Parameter
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
D
S
FDPF Series
FDP20N50
20
12.9
(Note 1) 80
(Note 2)
(Note 1)
(Note 1)
(Note 3)
250
2.0
FDP20N50
0.5
0.5
62.5
MAS 100 / MAS 110 / MAS 1 Service Manual
February 2007
UniFET
D
G
S
FDPF20N50 Unit
500
20 *
12.9•• • •
80•• • •
r30
1110
20
25
4.5
62
0.5
-55 to +150
300
FDPF20N50
2.0
--
62.5
www.fairchildsemi.com
TM
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/qC
qC
qC
Unit
qC/W
qC/W
qC/W
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