Memory (U300) - LG G1610 Service Manual

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3.8 Memory (U300)

The memory is consists of 128Mbit Nor Flash Memory and 32Mbit Pseudo SRAM. It has 16 bit
parallel data bus and 22 bit address.
Software, RF calibration data, audio parameters and battery calibration data are stored in the
Flash memory.
A-1, A0~A21
WP/ACC
RESET
CEf1
CEf2
RY/BYf
BYTE
WE
OE
CE1ps
CE2ps
UB
LB
A-1, A0 to A21
DQ0 to DQ15
CE1ps , CE2ps
CEf1 , CEf2
OE
WE
LB , UB
WP/ACC
RESET
BYTE
RY/BY f
Vccps
Vccf
Vss
DU
NC
Vccf
A-1 A0~A21
FLASH Memory
Vccps
A0~A20
PSEUDO SRAM
Figure 3-13 Block Diagram of Memory
Figure 3-8 Pin Description of U300
Address inputs
Data inputs / outputs
Chip enable inputs for Pseudo SRAM
Chip enable inputs for Nor Flash Memory
Output enable input
Write enable input
Data byte control inputs for Pseudo SRAM
Write protect /program acceleration input Nor Flash Memory
Hardware reset input for Nor Flash Memory
Word/Byte select input for Nor Flash Memory
Ready/Busy output for Nor Flash Memory
Power supply for Pseudo SRAM
Power supply for Nor Flash MemoryPseudo SRAM
Ground
Don t use
Not connected
- 27 -
Vss
DQ0~DQ15
(DQ~DQ7)
128 Mbits
Vss
32 Mbits
DQ0~DQ15
3. TECHNICAL BRIEF
DQ0~DQ15

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