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Panasonic Multi Chip Discrete UP05C8GF Specifications page 3

Multi chip discrete silicon npn epitaxial planar type (tr) silicon epitaxial planar type (ccd load device)

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UN05C8GF_P
-T
T
a
P
 T
T
a
120
80
40
0
0
40
80
120
( °C )
Ambient temperature T
a
UP05C8GF_I
-V
C
BE
I
 V
C
BE
50
V
= 6 V
CE
40
T
= 85°C
a
30
25°C
20
−25°C
10
0
0
0.4
0.8
Base-emitter voltage V
BE
UN05C8GF_I
-V
P
DS
I
 V
P
DS
4
2
0
0
4
8
12
Drain-source voltage V
DS
This product complies with the RoHS Directive (EU 2002/95/EC).
UP05C8GF_I
I
T
= 25°C
a
12
8
4
0
0
4
Collector-emitter voltage V
UP05C8GF_ V
V
CE(sat)
1
10
−1
T
= 85°C
a
10
−2
10
−1
1
1.2
( V )
Collector current I
16
( V )
SJJ00352BED
-V
C
CE
 V
C
CE
I
= 100 µA
B
80 µA
60 µA
40 µA
20 µA
8
12
( V )
CE
- I
CE(sat)
C
 I
C
160
I
/ I
= 10
C
B
120
−25°C
25°C
10
10
2
(mA)
C
UP05C8GF
UP05C8GF_I
-I
C
B
I
 I
C
B
V
= 6 V
CE
40
20
0
0
0.4
0.8
( A )
Base current I
B
UP05C8GF_ h
- I
FE
C
h
 I
FE
C
T
= 85°C
a
25°C
−25°C
80
40
0
1
10
Collector current I
(mA)
C
10
2
3

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