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UP05C8GF
Electrical Characteristics T
Tr
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
Transition frequency
*
Power gain
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Pulse measurement
CCD Load Device
Parameter
Pinchi off current
Output impedance
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C±3°C
a
Symbol
V
I
= 100 mA, I
CBO
C
V
I
= 10 mA, I
EBO
E
V
V
= 10 V, I
BE
CE
h
V
= 10 V, I
FE
CE
f
V
= 10 V, I
T
CB
PG
V
= 10 V, I
CB
Symbol
I
V
= 10 V, V
P
DS
Z
V
= 10 V, V
O
DS
SJJ00352BED
Conditions
= 0
E
= 0
C
= 2 mA
C
= 2 mA
C
= -15 mA, f = 200 MHz
E
= -1 mA, f = 100 MHz
E
Conditions
= 0
G
= 0
G
Min
Typ
Max
Unit
30
3
720
mV
100
250
1 300
MHz
20
Min
Typ
Max
Unit
3.8
5.2
mA
0.05
MW
V
V
dB
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