Multi Chip Discrete
UP05C8G
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
Basic Part Number
2SC3932 + CCD load device
Absolute Maximum Ratings T
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Tr
Emitter-base voltage
(Collector open)
Collector current
CCD
Limiting element voltage
load
Limiting element current
device
Total power dissipation
Junction temperature
Overall
Storage temperature
Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm
Publication date: November 2005
= 25°C
a
Symbol
Rating
V
30
CBO
V
20
CEO
V
3
EBO
I
50
C
V
40
max
I
10
max
*
P
125
T
T
125
j
T
–55 to +125
stg
Unit
1: Emitter
V
2: Base
3: Gate
V
Marking Symbol: 4V
V
Internal Connection
mA
V
mA
mW
°C
°C
SJJ00348AED
+0.05
0.20
(0.30)
0.10
–0.02
6
5
4
5°
1
2
3
(0.50)(0.50)
1.00
±0.05
1.60
±0.05
1番ピン端子表示
5°
4: Source
5: Drain
6: Collector
SSMini6-F1 Package
(C)
(D)
(S)
6
5
4
Tr
FET
1
2
3
(E)
(B)
(G)
Unit: mm
±0.02
1