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Panasonic Multi Chip Discrete UP05C8G Specification Sheet page 3

Multi chip discrete silicon npn epitaxial planar type (tr) silicon epitaxial planar type (ccd load device)

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UP05C8G_I
I
 V
C
50
V
= 10 V
CE
40
T
= 85°C
a
30
25°C
20
10
0
0
0.2
0.4
0.6
0.8
Base-emitter voltage V
UP05C8B_ C
C
 V
ob
100
10
1
0.1
0
5
10
15
Collector-base voltage V
Characteristics charts of CCD load device
UP05C8G_I
I
 V
P
4.5
V
= 0
G
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
Drain-source voltage V
-V
C
BE
BE
1
0.1
−25°C
0.01
1.0
1.2
1.4
0.1
( V )
BE
- V
ob
CB
CB
T
= 25°C
a
f = 1 MHz
20
25
30
35
(V)
CB
-V
P
DS
DS
10
12
14
16
( V )
DS
UP05C8G_ V
- I
CE(sat)
C
V
 I
CE(sat)
C
I
/ I
= 10
C
B
T
= 85°C
a
25°C
−25°C
1
10
100
Collector current I
(mA)
C
SJJ00348AED
UP05C8G
UP05C8G_ h
- I
FE
C
h
 I
FE
C
350
V
CE
300
T
= 85°C
a
250
25°C
200
−25°C
150
100
50
0
1
10
Collector current I
(mA)
C
= 10 V
100
3

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