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UP05C8G
Electrical Characteristics T
Tr
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
Transition frequency
*
Power gain
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
* : Pulse measurement
CCD Load Device
Parameter
Pinchi off current
Output impedance
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
UN05C8B_P
P
T
T
140
120
100
80
60
40
20
0
0
40
Ambient temperature T
Characteristics charts of Tr
UP05C8G_I
I
V
C
40
T
= 25°C
a
35
30
25
20
15
10
5
0
0
2
4
6
Collector-emitter voltage V
2
= 25°C±3°C
a
Symbol
V
I
CBO
C
V
I
EBO
E
V
V
BE
h
V
FE
f
V
T
G
V
P
Symbol
I
V
P
Z
V
O
-T
T
a
a
80
120
( °C )
a
-V
C
CE
CE
60
I
= 300 µA
V
B
250 µA
50
200 µA
40
150 µA
30
100 µA
20
50 µA
10
0
0
8
10
12
( V )
CE
Conditions
= 100 mA, I
= 0
E
= 10 mA, I
= 0
C
= 10 V, I
= 2 mA
CE
C
= 10 V, I
= 2 mA
CE
C
= 10 V, I
= -15 mA, f = 200 MHz
CB
E
= 10 V, I
= -1 mA, f = 100 MHz
CB
E
Conditions
= 10 V, V
= 0
DS
G
= 10 V, V
= 0
DS
G
UP05C8G_I
-I
C
B
I
I
C
B
= 10 V
CE
0.2
0.4
0.6
0.8
1.0
( mA )
Base current I
B
SJJ00348AED
Min
Typ
30
3
720
25
800
20
Min
Typ
3.5
0.05
UP05C8G_I
I
V
B
0.8
V
= 10 V
CE
T
= 25°C
a
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1.2
0.1
0.2
0.3
0.4
Base-emitter voltage V
Max
Unit
V
V
mV
250
1 200
MHz
dB
Max
Unit
5.5
mA
MW
-V
B
BE
BE
0.5 0.6 0.7 0.8 0.9
( V )
BE
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