Panasonic MA3S132D Specification Sheet

Switching Diodes
MA3S132D
Silicon epitaxial planar type
For switching circuits
■ Features
• Short reverse recovery time t
• Small terminal capacitance C
• Two isolated elements contained in one package, allowing high-
density mounting
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Single
Forward current
Double
Single
Peak forward
current
Double
Single
Non-repetitive peak
*
forward surge current
Double
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance MA3S132D
MA3S132E
*
Reverse recovery time MA3S132D
MA3S132E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA132WA)
rr
t
= 25°C
a
Symbol Rating
V 80
R
V 80
RM
I 100
F
150
I 225
FM
340
I 500
FSM
750
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V I
F F
V I
R R
I V
R R
C V
t R
= 10 mA, V
t I
rr F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R Note) The part numbers in the parenthesis show conventional part number.
i
, MA3S132E
(0.51)
Unit
V
V
EIAJ: SC-81
mA
SSMini3-F2 Package
Marking Symbol:
mA
• MA3S132D: MO • MA3S132E: MU
Internal Connection
mA
°C
°C
Conditions
= 100 µA
= 75 V
= 0 V, f = 1 MHz
= 6 V
R
= 0.1 I = 100 Ω
, R
R L
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00024BED
(MA132WK)
0.28 ±0.05
3
1 2
0.28 ±0.05
(0.51)
(0.80) (0.80)
+0.05
1.60
–0.03
3˚
MA3S132D MA3S132E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode
3 3
1 2 1
E
D
Min Typ Max
1.2
80
100
15
2
10
3
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Unit: mm
+0.05
0.12
–0.02
+0.05
0.60
–0.03
Cathode
2
Unit
V
V
nA
pF
ns
1