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Philips Semiconductors
200
P
o
(W)
160
120
80
40
0
10
15
f = 1 kHz.
(1) 1 × 6 Ω BTL configuration.
(2) 1 × 8 Ω BTL configuration.
(3) 2 × 3 Ω SE configuration.
(4) 2 × 4 Ω SE configuration.
Fig 22. Output power as a function of supply voltage;
THD + N = 0.5 %.
45
G
(dB)
40
35
30
25
20
2
10
10
V
= 100 mV; R
= 5.6 kΩ; C
i
s
(1) 1 × 8 Ω BTL configuration.
(2) 1 × 6 Ω BTL configuration.
(3) 2 × 4 Ω BTL configuration.
(4) 2 × 3 Ω BTL configuration.
Fig 24. Gain as a function of frequency; R
and C
= 330 pF.
i
9397 750 13356
Preliminary data sheet
001aab237
(1)
(2)
(3)
(4)
20
25
30
35
V
(V)
S
001aab239
(1)
(2)
(3)
(4)
3
4
10
10
10
f (Hz)
= ±27 V.
= 330 pF; V
i
p
= 5.6 kΩ
S
Rev. 01 — 1 October 2004
240
P
o
(W)
160
80
0
10
f = 1 kHz.
(1) 1 × 6 Ω BTL configuration.
(2) 1 × 8 Ω BTL configuration.
(3) 2 × 3 Ω SE configuration.
(4) 2 × 4 Ω SE configuration.
Fig 23. Output power as a function of supply voltage;
THD + N = 10 %.
45
G
(dB)
40
35
30
25
20
5
10
V
= 100 mV; R
i
(1) 1 × 8 Ω BTL configuration.
(2) 1 × 6 Ω BTL configuration.
(3) 2 × 4 Ω BTL configuration.
(4) 2 × 3 Ω BTL configuration.
Fig 25. Gain as a function of frequency; R
C
= 330 pF.
i
TDA8920B
2 × 100 W class-D power amplifier
(1)
(2)
(3)
(4)
15
20
25
30
(1)
(2)
(3)
(4)
2
3
4
10
10
10
= 0 Ω; C
= 330 pF; V
s
i
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
001aab238
35
V
(V)
S
001aab240
5
10
f (Hz)
= ±27 V.
p
= 0 Ω and
S
25 of 34
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