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Philips Semiconductors
13.9 Curves measured in reference design
2
10
(THD + N)/S
(%)
10
1
−1
10
−2
10
−3
10
−2
−1
10
10
= ±27 V; 2 × 3 Ω SE configuration.
V
p
(1) f = 6 kHz.
(2) 1 kHz.
(3) 100 Hz.
Fig 10. (THD + N)/S as a function of output power; SE
configuration with 2 × 3 Ω load.
2
10
(THD + N)/S
(%)
10
1
−1
10
−2
10
−3
10
−2
−1
10
10
= ±27 V; 1 × 6 Ω BTL configuration.
V
p
(1) f = 6 kHz.
(2) 1 kHz.
(3) 100 Hz.
Fig 12. (THD + N)/S as a function of output power; BTL
configuration with 1 × 6 Ω load.
9397 750 13356
Preliminary data sheet
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Rev. 01 — 1 October 2004
2
10
(THD + N)/S
(%)
10
1
−1
10
−2
10
−3
10
−2
3
10
= ±27 V; 2 × 4 Ω SE configuration.
V
p
(1) f = 6 kHz.
(2) 1 kHz.
(3) 100 Hz.
Fig 11. (THD + N)/S as a function of output power; SE
configuration with 2 × 4 Ω load.
2
10
(THD + N)/S
(%)
10
1
−1
10
−2
10
−3
10
−2
3
10
= ±27 V; 1 × 8 Ω BTL configuration.
V
p
(1) f = 6 kHz.
(2) 1 kHz.
(3) 100 Hz.
Fig 13. (THD + N)/S as a function of output power; BTL
configuration with 1 × 8 Ω load.
TDA8920B
2 × 100 W class-D power amplifier
−1
10
1
10
(1)
(2)
(3)
−1
10
1
10
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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