INSULATED GATE BIPOLAR TRAN-
SISTOR (IGBT) OPERATION
SOURCE
n +
p
n -
n +
p +
DRAIN
A. PASSIVE
F F I I G G U U R R E E E E E E . . 6 6 - - I I G G B B T T
GATE
n +
BODY REGION
DRAIN DRIFT REGION
BUFFER LAYER
INJECTING LAYER
POSITIVE
VOLTAGE
APPLIED
SOURCE
n +
n +
p
n -
n +
p +
DRAIN
B. ACTIVE
GATE
BODY REGION
DRAIN DRIFT REGION
BUFFER LAYER
INJECTING LAYER