LC-40SH340E
LC-40SH340K
20.
21.
FDC642
20.1
21.1.
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench® process that
has been especially tailored to minimize on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for
applications where the larger packages are impractical.
20.2
21.2.
x
x
x
x
x
x
x
20.3
21.3.
General Description
Features
0D[ U'6RQ
P DW 9*6
0D[ U'6RQ
P DW 9*6
Fast switching speed
Low gate charge (11nC typical)
High performance trench technology for extremely low rDS(on)
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1
mm thick)
Termination is Lead-free and RoHS Compliant
Pinning
-4.5 V, ID = -4.0 A
-2.5 V, ID = -3.2 A
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