Fdc642; General Description; Features; Pinning - Sharp LC-32LE510E Service Manual

20.
21.

FDC642

20.1
21.1.

General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench® process that
has been especially tailored to minimize on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for
20.2
applications where the larger packages are impractical.
21.2.

Features


Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A

Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A

Fast switching speed

Low gate charge (11nC typical)

High performance trench technology for extremely low rDS(on)

SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1
mm thick)
20.3

Termination is Lead-free and RoHS Compliant
21.3.

Pinning

63
LC-32LE510
LC-40LE510