LG GS205 Service Manual page 42

• Support Single & 32word Buffer Program
• WP/ACC input pin
- Allows special protection of two outermost boot blocks on both ends of flash array at VIL,
regardless of block protect status
- Removes special protection at VIH, the two outermost blocks on both ends of flash array
return to normal block protect status
- Reduce program time at VHH : 6us/word at Write Buffer
• Erase Suspend/Resume
• Program Suspend/Resume
• Unlock Bypass Program
• Hardware /RESET Pin
• Command Register Operation
• Supports Common Flash Memory Interface
• Endurance: 100,000 Program/Erase Cycles Minimum
• Data Retention: 10 years
<UtRAM>
• Process technology: CMOS
• Organization: 4M x 16 bit
• Power supply voltage: 2.7V~3.1V
• 4-Page Read
• Three state outputs
• Supports power saving modes
Internal TCSR (Temperature Compensated Self Refresh)
3.6.2 GENERAL DESCRIPTION
The K5L5563CAA is a Multi Chip Package Memory which combines 256Mbit NOR Flash
Memory and 64Mbit Page UtRAM.
The 256Mb NOR F lash featuring single 3.0V power supply, is an 256Mbit NOR-type Flash
Memory organized as 16M x16. The memory architecture of the device is designed to divide its
memory arrays into 134 blocks with independent hardware protection. This block architecture
provides highly flexible erase and program capability. The NOR Flash consists of four banks.
This device is capable of reading data from one bank while programming or erasing in the other
banks. The device offers fast page access time of 30ns with random access time of 70ns. The
device's fast access times allow high speed microprocessors to operate without wait states. The
device performs a program operation in unit of 16 bits (Word) and erases in units of a block.
Single or multiple blocks can be erased. The block erase operation is completed within typically
1.6 sec. The device requires 15mA as program/erase current in the commercial and extended
temperature ranges.
The 64Mb UtRAM is fabricated by SAMSUNG's advanced CMOS technology using one
transistor memory cell. The device supports 4 page read operation and Industrial temperature
range. The device also supports internal Temperature Compensated Self Refresh mode for the
standby power saving at room temperature range.
The K5L5563CAA is suitable for the memory of mobile communication system to reduce not
only mount area but also power consumption. This device is available in 84-ball FBGA package.
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