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IC DESCRIPTION -3/3 (HDC25D811B -1/6)
QQ
3 7 63 1515 0
Pin No.
Pin Name
1
DAT0
2
DAT1
3
DAT2
4
DAT3
5
DAT4
6
DAT5
7
DAT6
8
DAT7
9
GND
10
DAT8
11
DAT9
12
DAT10
13
DAT11
14
DAT12
15
DAT13
16
DAT14
17
DAT15
18
VDD
19
ADD0
TE
20
ADD1
L 13942296513
21
ADD2
22
ADD3
23
ADD4
24
VDD
25
ADD5
26
ADD6
27
ADD7
28
ADD8
29
ADD9
30
ADD10
31
GND
32
BS
33
RAS
34
CAS
35
WE
36
DQM(OE)
37
SDRAMCLK
38
DMEMTEST
www
39
TEST_SE
40
GND
.
41
TESTOUT0
http://www.xiaoyu163.com
I/O
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
-
GND
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
I/O
bi-directional data to DRAM
-
VDD
O
Address output to DRAM
O
Address output to DRAM
O
Address output to DRAM
O
Address output to DRAM
O
Address output to DRAM
-
VDD
O
Address output to DRAM
O
Address output to DRAM
O
Address output to DRAM
O
address output to DRAM
O
address output to DRAM
O
address output to DRAM
-
GND
O
SDRAM bank selection signal
O
DRAM RAS
O
DRAM CAS
O
DRAM WE
O
SDRAM DQM / EDO DRAM OE
O
SDRAM clock
I
DIRECT MEMORY TEST
I
TEST INPUT
x
ao
u163
y
-
GND
i
I/O
TEST OUT (Default 0)
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2 9
8
Description
Q Q
3
6 7
1 3
1 5
co
.
-49-
9 4
2 8
0 5
8
2 9
9 4
2 8
m
9 9
9 9
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