Table of Contents
Advertisement
High Performance MOSFET for Automotive Systems
Advanced HPA TrenchMOS technology improves performance and powers automotive innovation
NXP Semiconductors' High Performance Automotive (HPA)
TrenchMOS™ family of MOSFETs has specific features to
satisfy the high power requirements of safety and comfort
systems and improve system performance throughout the
car.
Vehicles contain multiple features that make driving more
comfortable, convenient and safer, such as engine management
units, catalytic converters, ABS, passenger restraint systems,
power assisted steering and electric windows, mirrors and seats.
Electric Power Assisted Steering (EPAS) systems, for example,
require around 1kW while pump and fan motors draw between
500W and 800W. Other applications, such as electric braking,
turbochargers or valve train control, also consume high power with
an Integrated Starter Alternator (ISA) requiring <10kW.
Such high power demands mean drawing higher current levels
from the standard 14V automotive supply. Power MOSFETs need
to provide the large current handling capability in standard,
inexpensive discrete packages without the need for large arrays of
devices and at minimum heat dissipation, even when operated for
long periods.
The HPA TrenchMOS products are extremely rugged with very low
on-state resistance and an excellent balance of current handling,
low dissipation and cost-effectiveness in industry standard
packages, supremely suited to the automotive environment. HPA
devices meet today's electrical power demands and are flexible
enough for future automotive innovations. Devices are available in
30V, 40V, 55V, 75V and 100V versions.
For further information, including the High Performance MOSFETs
for Automotive Systems Brochure, please complete the reply slip or visit
http://www.arrowne.com/innov/in216/f_1424.shtml
POWER AND LINEAR IC
An established leader in proven Trench technology, NXP has
advanced capabilities to the next level with an innovative stripe
configuration for the MOSFET cells that allows smaller cell pitch
– and hence lower on-state resistance - without a corresponding
increase in capacitance and gate charge. Consequently, HPA
devices offer faster switching for a given RDS on , leading to
an outstanding combination of size, reliability, efficiency and
performance that reduces system costs without cutting back
on functionality. Devices fabricated using this process are 20%
more rugged than previous generations, allowing HPA devices
to perform to their maximum potential even in the harshest
automotive environments. With enhanced avalanche capability,
they are rated for temperatures between -55°C and +175°C
and are fully compliant with the AEC Q101 standard stress test
qualification for discrete semiconductors.
As space efficiency becomes an important factor in system design,
the HPA family maximises the performance available from small
footprints.
Devices are available in a wide range of compact, standard
packages including TO220, D²PAK, LFPAK and DPAK as well as
Known Good Die (KGD) with the added benefit of even lower
RDS on values.
Features
Low RDS on
Rated for -55°C to +175°C
AEC Q101 compliant
TO220, D²PAK, LFPAK, DPAK or KGD
Applications
Electric power assisted steering
Integrated starter alternator
Electric turbochargers
Catalytic converter heaters
Water, oil and fuel pump motors
Windscreen wiper, seat, window and mirror motors
Engine management
Driving motors for power roofs and door locks
Seat belt pre-tensioning
Fuel pumps
SOLUTIONS
ENQUIRY 1424
NXP High
Performance
MOSFETs for
Automotive
Systems
Brochure
available!
25
Advertisement
Table of Contents
