MSI 990XA-GD55 series Installation Manual page 48

BIOS Setup BIOS Setup
▶ DRAM Frequency
Ths tem s used to adjust the DRAM frequency. Settng to [Auto], the system wll detect
the DRAM Frequency automatcally.
▶ Adjusted DRAM Frequency
It shows the adjusted Memory frequency. Read-only.
▶ DRAM Tmng Mode
Ths field has the capacty to automatcally detect the DRAM tmng.
▶ Advanced DRAM Configuraton
Press <Enter> to enter the sub-menu.
▶ Command Rate
Ths settng controls the DRAM command rate. ng controls the DRAM command rate. ng controls the DRAM command rate.
tCL
▶
Ths controls the CAS latency, whch determnes the tmng delay (n clock cycles) s controls the CAS latency, wh s controls the CAS latency, wh
before SDRAM starts a read command after rece before SDRAM starts a read command after rece before SDRAM starts a read command after recevng t.
▶ tRCD
When DRAM When DRAM When DRAM s refreshed, both rows and columns are addressed separately. Ths
setup tem allows you to determne the tmng of the transton from RAS (row address tem allows you to determ tem allows you to determ
strobe) to CAS (column address strobe). The less the clock cycles, the faster the strobe) to CAS (column address strobe). The less the clock cycles, the faster the strobe) to CAS (column address strobe). The less the clock cycles, the faster the
DRAM performance.
tRP
▶
Ths settng controls the number of cycles for Row Address Strobe (RAS) to be
allowed to precharge. If nsufficent tme s allowed for the RAS to accumulate ts
charge before DRAM refresh, refreshng may be ncomplete and DRAM may fal
to retan data. Ths tem apples only when synchronous DRAM s nstalled n the
system.
▶ tRAS
Ths settng determnes the tme RAS takes to read from and wrte to memory cell.
tRTP
▶
Tme nterval between a read and a precharge command.
3-12
  s refreshed, both rows and columns are addressed separately. Th s refreshed, both rows and columns are addressed separately. Th