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Philips Semiconductors
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
9
THERMAL CHARACTERISTICS
SYMBOL
R
thermal resistance from junction to ambient
th(j-a)
R
thermal resistance from junction to case
th(j-c)
10 QUALITY SPECIFICATION
Quality according to "SNW-FQ-611E" .
11 DC CHARACTERISTICS
= 25 °C; R
= ∞; V
T
amb
L
SYMBOL
Supplies
V
supply voltage
P
I
total quiescent current
q(tot)
I
standby current
stb
V
DC output voltage
O
V
low supply voltage mute
P(mute)
V
low supply voltage mute
P(mute)(hys)
hysteresis
V
output offset voltage
OO
2002 Jan 14
PARAMETER
handbook, halfpage
OUT1
2 K/W
Fig.11 Equivalent thermal resistance network.
= V
= V
= V
= 14.4 V; measured in the circuit of Fig.29; unless otherwise specified.
P
P1
P2
P3
PARAMETER
CONDITIONS
in free air
see Fig.11
virtual junction
OUT2
OUT3
2 K/W
2 K/W
0.5 K/W
case
CONDITIONS
operating to mute mode
mute to operating mode
mute mode; V
= 0 V
MUTE/ON
operating mode; V
MUTE/ON
14
Preliminary specification
VALUE
OUT4
2 K/W
MGT602
MIN.
TYP.
8.0
14.4
120
200
−
2
−
7.2
6.0
7.0
6.3
7.0
−
0.4
−
0
= 5 V −
0
TDA8591J
UNIT
40
K/W
1
K/W
MAX.
UNIT
18.0
V
290
mA
µA
50
−
V
8.0
V
8.5
V
−
V
30
mV
60
mV
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