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User Capacity | Model Number |
480 GB | XP480SE30001 |
960 GB | XP960SE30001 |
1920 GB | XP1920SE30001 |
For Internal SSD Support, visit:https://www.seagate.com/support/products/
For Firmware Download and Tools Download for Secure Erase, visit: https://www.seagate.com/support/downloads/
For information regarding online support and services, visit:http://www.seagate.com/contacts/
For information regarding Warranty Support, visit: http://www.seagate.com/support/warranty-and-replacements/
For information regarding data recovery services, visit: http://www.seagate.com/services-software/seagate-recovery-services/recover/
For Seagate OEM and Distribution partner and Seagate reseller portal, visit: http://www.seagate.com/partners
The Seagate Nytro 4350 SSD is a fast, dependable storage solution for boot applications or read-intensive workloads in data centers. The Seagate Nytro 4350 SSD offers PCIe Gen 4 x 4 interface with NVMe protocol support in a small M.2 form factor.
Table 1 The Nytro 4350 SSD Features
Feature | Description | |
Capacity (User) |
| |
Certifications, Eco-Compliance |
| |
Dimensions |
| |
Endurance |
| Endurance rating valid for SSD Life Remaining > 1% (SMART E7h>1). See Section Reliability and Endurance. |
Form Factor |
| |
Interface Compliance |
| |
NAND |
| |
Operating Systems |
| |
Performance Random |
| Actual performance might vary depending on use conditions and environment. See Section Performance. |
Performance Sequential |
| Actual performance might vary depending on the capacity, use conditions and environment. See Section Performance. |
Power Consumption |
| Results vary with capacity and mode. See Section Power Consumption. |
Power Management |
| |
Power Loss Data Protection |
| |
Reliability |
| |
Security |
| |
Shock and Vibration | Shock
| See Section Environmental Conditions. |
Vibration
| ||
Temperature Range (Operating) |
| |
Voltage |
| |
Warranty |
| |
Weight |
|
Table 2 Models and Capacity
Capacity | Model | User Addressable Sectors |
480 GB | XP480SE30001 | 937,703,088 |
960 GB | XP960SE30001 | 1,875,385,008 |
1920 GB | XP1920SE30001 | 3,750,748,848 |
NOTE
About capacity:
Table 3 Random and Sequential Read and Write Performance
Parameter | 480 GB | 960 GB | 1920 GB |
128KB Sequential Read (MB/s) | 5500 | 5500 | 5500 |
128KB Sequential Write (MB/s) | 700 | 1400 | 2000 |
4KB Random Read (IOPS) | 400,000 | 600,000 | 800,000 |
4KB Random Write (IOPS) | 17,000 | 34,000 | 58,000 |
8KB Random Read (IOPS) | 230,000 | 330,000 | 460,000 |
8KB Random Write (IOPS) | 9,000 | 18,000 | 30,000 |
NOTE
About performance:
Table 4 QD1 4KB Random Average Latency
Capacity | Read (4KB) | Write (4KB) |
480 GB | 75 | 40 |
960 GB | 75 | 30 |
1920 GB | 75 | 30 |
NOTE
About latency:
Table 5 Quality of Service (QoS)
Capacity | QoS (99%) | |||
Read (4KB QD=1) | Write (4KB QD=1) | Read (4KB QD=32) | Write (4KB QD=32) | |
Unit: µs | ||||
480 GB | 100 | 60 | 350 | 1600 |
960 GB | 100 | 50 | 300 | 970 |
1920 GB | 100 | 50 | 250 | 850 |
Capacity | QoS (99.99%) | |||
Read (4KB QD=1) | Write (4KB QD=1) | Read (4KB QD=32) | Write (4KB QD=32) | |
Unit: µs | ||||
480 GB | 130 | 130 | 550 | 1500 |
960 GB | 130 | 130 | 550 | 1300 |
1920 GB | 130 | 130 | 450 | 1100 |
NOTE
About QoS:
Table 6 Supply Voltage
Parameter | Rating |
Operating Voltage | Min = 3.14V Max = 3.47V |
Rise Time (Max/Min) | 100 ms / 0.1 ms |
Fall Time (Max/Min) | 1 s / 10 ms |
Minimum Off Time | 1 s |
NOTE
Minimum Off Time is the time between power being removed from the SSD (Vcc<100 mW) and power being reapplied to the SSD.
Table 7 Power Consumption
480 GB | 960 GB | 1920 GB | |
Active Read (RMS, Max) | 9.4W | 10.4W | 11.55W |
Active Write (RMS, Max) | 6.3W | 8.1W | 10.7W |
Idle | 3.3W | 3.3W | 3.3W |
NOTE
About power consumption:
Table 8 Temperature, Humidity, Shock
Specification | Value | |
Temperature | Operational temperature (with airflow: 800 LFM at 35°C) | 0°C to 70°C |
Non-operating | -40°C to 85°C | |
Humidity | Operating | 90% |
Non-operating (storage) | 93% | |
Shock Non-operating | 1,500 G, duration 0.5 ms | |
Vibration Non-operating | 1.52 GRMS, (20Hz to 80Hz, Frequency) |
NOTE
Temperature is measured without condensation.
Operating mode temperature is measured by temperature sensor, SMART Attribute C2h.
Airflow is suggested. Airflow allows the device to be operated at the appropriate temperature for each component during heavy workloads environments.
NOTE
Shock and vibration results assume that the SSD is mounted securely with the input vibration applied to the SSD mounting. These specifications do not cover connection issues that may result from testing at this level. The measured specification is in root mean square (RMS) form.
Table 9 Reliability and Endurance
Specification | Value |
Mean time between failures (MTBF) | 2 million hours |
Bit Error Rate | 1 error in 1017 bits read |
Endurance |
|
NOTE
About endurance:
Table 10 Dimensions and Weight
Capacity | Weight | Length | Width | Height |
480GB | 9.7g | 80 mm ± 0.15mm | 22 mm ± 0.15mm | 4 mm ± 0.08mm
|
960GB | 10.3g | |||
1920GB | 10.5g |
See Figures 1-3.
Table 11 Pin Descriptions
Pin No | PCIe Pin | Description |
1 | GND | CONFIG_3=GND |
2 | 3.3V | 3.3V source |
3 | GND | Ground |
4 | 3.3V | 3.3V source |
5 | PETn3 | PCIe TX Differential signal defined by the PCI Express M.2 spec |
6 | N/C | No connect |
7 | PETp3 | PCIe TX Differential signal defined by the PCI Express M.2 spec |
8 | N/C | No connect |
9 | GND | Ground |
10 | LED1# | Open drain, active low signal. These signals are used to allow the add- in card to provide status indicators via LED devices that will be provided by the system. |
11 | PERn3 | PCIe RX Differential signal defined by the PCI Express M.2 spec |
12 | 3.3V | 3.3V source |
13 | PERp3 | PCIe RX Differential signal defined by the PCI Express M.2 spec |
14 | 3.3V | 3.3V source |
15 | GND | Ground |
16 | 3.3V | 3.3V source |
17 | PETn2 | PCIe TX Differential signal defined by the PCI Express M.2 spec |
18 | 3.3V | 3.3V source |
19 | PETp2 | PCIe TX Differential signal defined by the PCI Express M.2 spec |
20 | N/C | No connect |
21 | GND | Ground |
22 | N/C | No connect |
23 | PERn2 | PCIe RX Differential signal defined by the PCI Express M.2 spec |
24 | N/C | No connect |
25 | PERp2 | PCIe RX Differential signal defined by the PCI Express M.2 spec |
26 | N/C | No connect |
27 | GND | Ground |
28 | N/C | No connect |
29 | PETn1 | PCIe TX Differential signal defined by the PCI Express M.2 spec |
30 | N/C | No connect |
31 | PETp1 | PCIe TX Differential signal defined by the PCI Express M.2 spec |
32 | N/C | No connect |
33 | GND | Ground |
34 | N/C | No connect |
35 | PERn1 | PCIe RX Differential signal defined by the PCI Express M.2 spec. |
36 | N/C | No connect |
37 | PERp1 | PCIe RX Differential signal defined by the PCI Express M.2 spec. |
38 | N/C | No connect |
39 | GND | Ground |
40 | SMB_CLK (I/O)(0/1.8V) | SMBus Clock; Open Drain with pull-up on platform. |
41 | PETn0 | PCIe TX Differential signal defined by the PCI Express M.2 spec. |
42 | SMB_DATA (I/O)(0/1.8V) | SMBus Data; Open Drain with pull-up on platform. |
43 | PETp0 | PCIe TX Differential signal defined by the PCI Express M.2 spec. |
44 | ALERT#(O) (0/1.8V) | Alert notification to master; Open Drain with pull-up on platform; Active low. |
45 | GND | Ground |
46 | N/C | No connect |
47 | PERn0 | PCIe RX Differential signal defined by the PCI Express M.2 spec. |
48 | N/C | No connect |
49 | PERp0 | PCIe RX Differential signal defined by the PCI Express M.2 spec. |
50 | PERST#(I)(0/3. 3V) | PE-Reset is a functional reset to the card as defined by the PCIe Mini CEM specification. |
51 | GND | Ground |
52 | CLKREQ#(I/O) (0/3.3V) | Clock Request is a reference clock request signal as defined by the PCIe Mini CEM specification; Also used by L1 PM Sub-states. |
53 | REFCLKn | PCIe Reference Clock signals (100 MHz) defined by the PCI Express M.2 spec. |
54 | PEWAKE#(I/O) (0/3.3V) | PCIe PME Wake. Open Drain with pull up on platform; Active Low. |
55 | REFCLKp | PCIe Reference Clock signals (100 MHz) defined by the PCI Express M.2 spec. |
56 | Reserved for MFG DATA | Manufacturing Data line. Used for SSD manufacturing only. Not used in normal operation. platform Socket. |
57 | GND | Ground |
58 | Reserved for MFG CLOCK | Manufacturing Clock line. Used for SSD manufacturing only. Not used in normal operation. Pins should be left N/C in platform Socket. |
59 | Module Key M | Module Key |
60 | Module Key M | |
61 | Module Key M | |
62 | Module Key M | |
63 | Module Key M | |
64 | Module Key M | |
65 | Module Key M | |
66 | Module Key M | |
67 | N/C | No connect |
68 | SUSCLK(32KHz) (I)(0/3.3V) | 32.768 kHz clock supply input that is provided by the platform chipset to reduce power and cost for the module. |
69 | N/C | PEDET (NC-PCIe) |
70 | 3.3V | 3.3V source |
71 | GND | Ground |
72 | 3.3V | 3.3V source |
73 | GND | Ground |
74 | 3.3V | 3.3V source |
75 | GNDZD | Ground |
The Nytro 4350 SSD supports the SMART command set.
SMART IDs
The following table lists SMART IDs and Descriptions.
Table 12 SMART Attributes (Log Identifier 02h)
Bytes Index | Bytes | Description |
[0] | 1 | Critical Warning |
[2:1] | 2 | Composite Temperature |
[3] | 1 | Available Spare |
[4] | 1 | Available Spare Threshold |
[5] | 1 | Percentage Used |
[31:6] | 26 | Reserved |
[47:32] | 16 | Data Units Read |
[63:48] | 16 | Data Units Written |
[79:64] | 16 | Host Read Commands |
[95:80] | 16 | Host Write Commands |
[111:96] | 16 | Controller Busy Time |
[127:112] | 16 | Power Cycles |
[143:128] | 16 | Power On Hours |
[159:144] | 16 | Unsafe Shutdowns |
[175:160] | 16 | Media and Data Integrity Errors |
[191:176] | 16 | Number of Error Information Log Entries |
[195:192] | 4 | Warning Composite Temperature Time |
[199:196] | 4 | Critical Composite Temperature Time |
[201:200] | 2 | Temperature Sensor 1 (Current Temperature) |
[203:202] | 2 | Temperature Sensor 2 (N/A) |
[205:204] | 2 | Temperature Sensor 3 (N/A) |
[207:206] | 2 | Temperature Sensor 4 (N/A) |
[209:208] | 2 | Temperature Sensor 5 (N/A) |
[211:210] | 2 | Temperature Sensor 6 (N/A) |
[213:212] | 2 | Temperature Sensor 7 (N/A) |
[215:214] | 2 | Temperature Sensor 8 (N/A) |
[511:216] | 296 | Reserved |
NOTE
(Optional) Contextual information for Log Identifier 02h:
Flash memory cells deteriorate with use. This can generate random bit errors in the stored data. The Nytro 4350 SSD applies the LDPC ECC algorithm to detect and correct errors occur during read process, to make sure the SSD reads correctly, and to protect data from corruption.
NAND flash devices can undergo only a limited number of program/erase cycles. Commonly, the SSD does not use areas of the flash media evenly. If the SSD updates some areas more frequently than others, this reduces the lifetime of the device. Wear Leveling extends the life of the NAND Flash by evenly distributing write and erase cycles across the media.
Seagate's advanced Wear Leveling algorithm spreads the flash usage throughout the whole flash media area. Implementing dynamic and static Wear Leveling algorithms improves the life expectancy of the NAND flash.
Bad blocks do not function properly and they can contain more invalid bits. This can make stored data unstable and bad block reliability is not guaranteed. Blocks identified and marked as bad by the manufacturer are called "Early Bad Blocks". Bad blocks that develop during the lifespan of the Flash are called "Later Bad Blocks". Seagate's bad block management algorithm detects the factory-produced bad blocks and manages bad blocks that appear with use. This practice prevents the drive from storing data in bad blocks and improves data reliability
The TRIM feature improves the read/write performance and speed of SSDs. SSDs cannot overwrite existing data, so the available space becomes smaller with each data block use. The TRIM command runs within the operating system to tell the SSD which data blocks can be removed permanently because they are no longer in use. The SSD erases these unused data blocks.
SMART, stands for Self-Monitoring, Analysis, and Reporting Technology. SMART is an open standard that allows an SSD to automatically detect its health and report potential failures. When SMART records a failure, users can replace the SSD to prevent unexpected outage or data loss. SMART can also inform users of impending failures while there is still time to copy data to another device.
Over Provisioning (OP) preserves an additional area beyond user capacity in an SSD, which is not visible to users and cannot be used by them. OP improves performance and IOPS (Input/Output Operations per Second) by providing the controller additional space to manage P/E cycles. OP enhances the reliability and endurance as well. Moreover, the write amplification of the SSD becomes lower when the controller writes data to the flash.
Firmware provides a set of instructions on how the device communicates with the host. Firmware upgrades are typically available with added features, fixed compatibility issues, and improved read/write performance.
Thermal throttling prevents components in an SSD from over-heating during read and write operations. The Nytro 4350 SSD design provides an on-die and on-board thermal sensor. With this accuracy, firmware can apply different levels of throttling to protect efficiently and proactively through the SMART reading.
Table 13 Current version: Thermal Throttling 2.0
Item | Content |
Smart reporting temperature | Flash normalized case temperature |
Reference of temp. reading | On-board thermal sensor, Controller on-die thermal sensor |
tmt1 threshold | 76°C per Smart reported |
tmt2 threshold | 79°C per Smart reported |
Protect controller threshold | 115°C from on-die thermal sensor |
Fatal threshold | 120°C from on-die thermal sensor |
Resume performance threshold | 72°C per Smart reported |
Temperature polling frequency | Every 1 sec |
TMT1_state impact | ±10% CE |
TMT2_state impact | -20% CE |
An NVMe namespace is a quantity of non-volatile memory (NVM) that can be formatted into logical blocks.
Namespaces are used when a storage virtual machine is configured with the NVMe protocol. Nytro 4350 SSD supports up to 16 namespaces for greater deployment flexibility.
Garbage collection allocates and releases memory to accelerate the read/write processing and improve performance. When there is less available space, the SSD slows down the read/write processing and implements garbage collection to release memory.
Secure Erase is a standard NVMe format command and it writes all of "0x00" to fully wipe all the data on hard drives and SSDs. When this command issues, the SSD controller erases its storage blocks and returns to its factory default settings.
TCG defines Physical Presence SID (PSID) as a 32-character string. PSID reverses the SSD to its manufacturing setting when the SSD is set through TCG Pyrite (non-SED). The PSID code is printed on the SSD label. PSID erases all data when reverting the SSD to manufacturing settings.
The Sanitize feature uses the Format NVM command to provide an alternative to the existing secure erase capabilities. This feature provides robust data security by making sure the user data from the SSD media, caches, and the Controller Memory Buffer are erased by the block erase operations, overwriting or destroying the encryption key. The following table shows the types of Sanitize Operations supported.
Table 14 Sanitize Operations
SSD Security Type | Sanitize Operation | TCG Commands | |||
Overwrite | Block Erase | Crypto Erase | PSID Revert Process | Instant Security Erase | |
Non-SED (TCG Pyrite) | Yes | Yes | No | Yes | No |
NOTE
Sanitize Overwrite command erases all data on the disk beyond all feasible effort to recover. Completion takes at least one hour per terabyte per pass. The number of passes is drive-selectable. The NVMe spec default is 16 passes. Contact Seagate Support for more detailed information.
Drive Writes per Day (DWPD) The Total Bytes Written (TBW) specification of an SSD calculates how many times you can write the user capacity of an SSD per day over the warranty period (or a different number of years), based on the JEDEC workload used to specify the TBW.
DWPD = (TBW of an SSD x 1024) / (Warranty days x SSD size in GB)
TBW measures the lifespan of the SSD. This measurement represents the amount of data written to the device. To calculate the TBW of an SSD, use the following equation:
TBW = [(NAND Endurance) x (SSD Capacity)] / [WAF]
NAND Endurance: NAND endurance refers to the P/E (Program/Erase) cycle of a NAND flash.
SSD Capacity: The SSD capacity is the specific capacity in total of an SSD.
WAF: Write Amplification Factor (WAF) is a numerical value. This value represents the ratio between the amount of data that an SSD controller needs to write and the amount of data that the host's flash controller writes. A WAF, near 1, guarantees better endurance and lower frequency of data written to flash memory.
TBW in this document is based on the JEDEC 218/219 workload.
The SMART attribute byte index [5], Percentage Used, reports the Actual Life Indicator. Replace the SSD when this number reaches 100%.
(End of Life)
When program/erase cycles age the SSD, media wear-out can cause increasing numbers of bad blocks. When the number of usable good blocks is less than the threshold (5%, SMART attribute log ID 02h Byte4), the SSD notifies the host through an AER event and Critical Warning to enter Read Only Mode to prevent further data corruption. When this happens, replace the SSD immediately.
When the Host tries to read data from the SSD, the SSD performs only one read action after receiving one command. However, the Nytro 4350 SSD applies Predict and Fetch to improve the read speed. When the host issues sequential read commands to the SSD, the SSD expects that the following are also read commands. Therefore, before receiving the next command, flash has prepared the data. This accelerates data processing time, and the host needs less wait time to receive data.
Based on the available space of the SSD, the Nytro 4350 SSD regulates the read/write speed and manages the performance of throughput. When the SSD has more space, the firmware continuously performs read/write actions. When the SSD has less available space, it slows down the read/write processing and implements garbage collection to release memory.
There are a lot of components assembled on a single SSD device. Please handle the drive with careespecially when it has any WLCSP (Wafer Level Chip Scale Packaging) components such as PMIC, thermal sensor or load switch. WLCSP is one of the packaging technologies that is widely adopted for making smaller footprints, but any bumps or scratches may damage those ultrasmall parts so gentle handling is strongly recommended.
DO NOT DROP SSD
INSTALL SSD WITH CARE
STORE SSD IN A PROPER PACKAGE
M Key M.2 SSD (Figure 1) is only compatible to M Key (Figure 2) socket. As shown in Use Case 2, misuse may cause severe damages to SSD including burn-out.
Seagate Technology LLC
AMERICAS
Seagate Technology LLC 47488 Kato Road, Fremont, California 94538, United States, 510-661-1000
ASIA/PACIFIC
Seagate Singapore International Headquarters Pte. Ltd. 7000 Ang Mo Kio Avenue 5, Singapore 569877, 65-6485-3888
EUROPE, MIDDLE EAST AND AFRICA
Seagate Technology Netherlands BV, Tupolevlaan, 105, 119 PA Schipol-Rijk. the Netherlands
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