Sony Vaio VGN-S36C Service Manual page 33

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MAX1993ETG+TG069 (MAXIM)
HIGHSPEED STEP DDOWN REGULATOR
TOP VIEW
24
23
22
TON
1
FBLANK
2
LSAT
3
MAX1993
PGOOD
4
ILIM
5
REF
6
7
8
9
ELECTRICAL CHARACTERISTICS
= SHDN = 5V, SKIP = GND, T
(V+ = 15V, V
= V
= 0°C to +85°C, unless otherwise noted. Typical values are at T
CC
DD
A
PARAMETER
SYMBOL
PWM CONTROLLER
V
Battery voltage, V+
IN
Input Voltage Range
V
V
, V
BIAS
CC
DD
MAX1992
Output Voltage Accuracy
V+ = 4.5V to 28V,
V
OUT
SKIP = V
(MAX1992 Fixed)
CC
(Note 2)
MAX1992 V+ = 4.5V to 28V, SKIP = V
Feedback Voltage Accuracy
V
FB
(MAX1992 Adjustable)
(Note 2)
MAX1993
Feedback Voltage Accuracy
V+ = 4.5V to 28V,
V
FB
SKIP = V
(MAX1993)
CC
(Note 2)
= 0 to 3A, SKIP = V
Load Regulation Error
I
LOAD
Line Regulation Error
V
= 4.5V to 5.5V, V+ = 4.5V to 28V
CC
FB Input Bias Current
I
FB
Output Adjust Range
MAX1992
OUT Input Resistance
R
OUT
MAX1993
OUT Discharge Mode
R
DISCHARGE
On-Resistance
OUT Synchronous Rectifier
Discharge Mode Turn-On Level
Rising edge on SHDN to full current limit
Soft-Start Ramp Time
t
SS
ELECTRICAL CHARACTERISTICS (continued)
= SHDN = 5V, SKIP = GND, T
(V+ = 15V, V
= V
= 0°C to +85°C, unless otherwise noted. Typical values are at T
CC
DD
A
PARAMETER
SYMBOL
V+ = 15V,
On-Time
t
V
= 1.5V
ON
OUT
(Note 3)
Minimum Off-Time
t
(Note 3)
OFF(MIN)
FB forced above the regulation point,
LSAT = GND
Quiescent Supply Current (V
)
I
CC
CC
FB forced above the regulation point,
V
> 0.5V
LSAT
Quiescent Supply Current (V
)
I
FB forced above the regulation point
DD
DD
Quiescent Supply Current (V+)
I
V+
SHDN = GND
Shutdown Supply Current (V
)
CC
SHDN = GND
Shutdown Supply Current (V
)
DD
SHDN = GND, V+ = 28V,
Shutdown Supply Current (V+)
V
= V
= 0 or 5V
CC
DD
REFERENCE
V
= 4.5V to 5.5V,
CC
Reference Voltage
V
REF
I
= 0
REF
∆V
Reference Load Regulation
I
= -10µA to 50µA
REF
REF
REF Lockout Voltage
V
Rising edge, hysteresis = 350mV
REF(UVLO)
REFIN Voltage Range
REFIN Input Bias Current
I
REFIN
FAULT DETECTION
With respect to error comparator threshold,
Overvoltage Trip Threshold
OVP/UVP = V
Overvoltage Fault Propagation
t
FB forced 2% above trip threshold
OVP
Delay
Output Undervoltage Protection
With respect to error comparator threshold,
Trip Threshold
OVP/UVP = V
Output Undervoltage Protection
From rising edge of SHDN
t
BLANK
Blanking Time
Output Undervoltage Fault
t
UVP
Propagation Delay
With respect to error comparator threshold,
PGOOD Lower Trip Threshold
hysteresis = 1%
With respect to error comparator threshold,
PGOOD Upper Trip Threshold
hysteresis = 1%
FB forced 2% beyond PGOOD trip
PGOOD Propagation Delay
t
PGOOD
threshold
21
20
19
18
DL
BST
17
LX
16
15
DH
V+
14
SKIP
13
10
11
12
= +25 °C.)
A
CONDITIONS
MIN
TYP
MAX
UNITS
2
28
4.5
5.5
FB = GND
2.475
2.5
2.525
FB = V
1.782
1.8
1.818
CC
CC
0.693
0.7
0.707
REFIN = 0.35 × REF
0.693
0.7
0.707
REFIN = REF
1.980
2
2.020
0.1
CC
0.25
-0.1
+0.1
0.7
5.5
FB = GND
90
190
350
FB = V
or adjustable
70
145
270
CC
400
800
1400
10
25
0.2
0.3
0.4
1.7
= +25 °C.)
A
CONDITIONS
MIN
TYP
MAX
UNITS
TON = GND (600kHz)
170
194
219
TON = REF (450kHz)
213
243
273
TON = open (300kHz)
316
352
389
TON = V
(200kHz)
461
516
571
CC
400
500
0.55
0.85
1
<1
5
25
40
<1
7
<1
5
<1
5
T
= +25 °C to +85°C
1.986
2
2.014
A
T
= 0°C to +85°C
1.983
2
2.017
A
-0.01
+0.01
1.95
0.7
V
REF
0.01
0.05
12
16
20
CC
10
65
70
75
CC
10
35
10
-13
-10
-7
+7
+10
+13
10
ELECTRICAL CHARACTERISTICS (continued)
= SHDN = 5V, SKIP = GND, T
(V+ = 15V, V
= V
CC
DD
PARAMETER
SYMBOL
PGOOD Output Low Voltage
PGOOD Leakage Current
I
PGOOD
Fault Blanking Time
t
FBLANK
Thermal Shutdown Threshold
T
SHDN
V
Undervoltage Lockout
CC
V
UVLO(VCC)
Threshold
CURRENT LIMIT
ILIM Adjustment Range
Current-Limit Input Range
CSP/CSN Input Current
Valley Current-Limit Threshold
V
LIM(VAL)
(Fixed)
Valley Current-Limit Threshold
V
LIM(VAL)
(Adjustable)
Current-Limit Threshold
V
NEG
(Negative)
Current-Limit Threshold
V
ZX
(Zero Crossing)
Inductor Saturation Current-Limit
Threshold
ILIM Saturation Fault Sink Current
I
ILIM(LSAT)
ILIM Leakage Current
V
GATE DRIVERS
DH Gate Driver On-Resistance
R
DH
DL Gate Driver On-Resistance
R
DL
V
DH Gate Driver Source/Sink
I
DH
Current
V
DL Gate Driver Source Current
I
DL(SOURCE)
V
%
ELECTRICAL CHARACTERISTICS (continued)
%
= SHDN = 5V, SKIP = GND, T
(V+ = 15V, V
= V
µA
CC
DD
V
PARAMETER
SYMBOL
DL Gate Driver Sink Current
I
DL(SINK)
kΩ
Dead Time
t
DEAD
INPUTS AND OUTPUTS
OD On-Resistance
R
OD
OD Leakage Current
V
Logic Input Threshold
ms
Logic Input Current
Dual Mode™ Threshold Voltage
Four-Level Input Logic Levels
Four-Level Logic Input Current
ns
ELECTRICAL CHARACTERISTICS
= SHDN = 5V, SKIP = GND, T
(V+ = 15V, V
= V
CC
DD
ns
PARAMETER
SYMBOL
PWM CONTROLLER
mA
V
IN
Input Voltage Range
V
BIAS
µA
Output Voltage Accuracy
µA
V
OUT
(MAX1992 Fixed)
µA
µA
Feedback Voltage Accuracy
V
FB
µA
(MAX1992 Adjustable)
Feedback Voltage Accuracy
V
FB
V
(MAX1993)
V
V
V
On-Time
t
ON
µA
Dual Mode is a trademark of Maxim Integrated Products, Inc.
%
µs
%
ms
µs
%
%
µs
VGN-S36C/S36GP/S36LP/S36SP/S36TP/S38CP/S52B/
S62PS/S62PSY/S62S/S350F/S350FP/S360/S360P/S370F
1-28
= 0°C to +85°C, unless otherwise noted. Typical values are at T
A
CONDITIONS
MIN
TYP
I
= 4mA
SINK
FB = REF (PGOOD high impedance),
PGOOD forced to 5.5V
FBLANK = V
120
218
CC
FBLANK = open
80
140
FBLANK = REF
35
63
Hysteresis = 15°C
160
Rising edge, PWM disabled below this level
4.1
4.25
hysteresis = 20mV
0.25
CSP
0
CSN
-0.3
-0.5
V
- V
, ILIM = V
45
50
CSP
CSN
CC
V
= 250mV
15
25
ILIM
V
- V
CSP
CSN
V
= 2.00V
170
200
ILIM
, SKIP = ILIM = V
V
- V
,
CSP
CSN
CC
-75
-60
T
= +25 °C
A
With respect to valley current-limit
, SKIP = GND,
threshold, V
- V
2.5
CSP
CSN
ILIM = V
CC
LSAT = V
180
200
With respect to
CC
valley current-limit
LSAT = open
157
175
threshold,
ILIM = V
LSAT = REF
135
150
CC
V
- V
> inductor saturation current
CSP
CSN
4
6
limit, 0.25V < V
< 2.0V
ILIM
V
- V
< inductor saturation current
CSP
CSN
limit
BST - LX forced to 5V
1.5
DL, high state
1.5
DL, low state
0.6
DH forced to 2.5V, BST - LX forced to 5V
1
DL forced to 2.5V
1
= 0°C to +85°C, unless otherwise noted. Typical values are at T
A
CONDITIONS
MIN
TYP
DL forced to 2.5V
3
DL rising
35
DH rising
26
GATE = V
10
CC
GATE = GND, OD forced to 5.5V
1
SHDN, SKIP, GATE
1.20
1.7
rising edge, hysteresis = 225mV
SHDN, SKIP, GATE
-1
High
1.9
2.0
MAX1992 FB
Low
0.05
0.1
V
-
CC
High
0.4V
TON, OVP/UVP,
Open
3.15
LSAT, FBLANK
REF
1.65
Low
TON, OVP/UVP, LSAT,
-3
FBLANK forced to GND or V
CC
= -40°C to +85°C, unless otherwise noted.) (Note 4)
A
CONDITIONS
MIN
Battery voltage, V+
2
V
, V
4.5
CC
DD
MAX1992,
FB = GND
2.462
V+ = 4.5V to 28V,
SKIP = V
CC
FB = V
1.773
(Note 2)
CC
MAX1992, V+ = 4.5V to 28V, SKIP = V
CC
0.689
(Note 2)
MAX1993,
REFIN = 0.35 × REF
0.689
V+ = 4.5V to 28V,
SKIP = V
CC
REFIN = REF
1.970
(Note 2)
TON = GND (600kHz)
170
V+ = 15V,
TON = REF (450kHz)
213
V
= 1.5V
OUT
TON = open (300kHz)
316
(Note 3)
TON = V
(200kHz)
461
CC
Confidential
(J/AM/AO)
IC
= +25 °C.)
A
MAX
UNITS
0.3
V
1
µA
320
205
µs
95
°C
4.4
V
2.00
V
2.7
V
+28.0
+0.5
µA
55
mV
35
mV
230
-45
mV
mV
220
193
%
165
8
µA
0.1
µA
5
5
3
A
A
= +25 °C.)
A
MAX
UNITS
A
ns
25
200
nA
2.20
V
+1
µA
2.1
V
0.15
3.85
V
2.35
0.5
+3
µA
MAX
UNITS
28
V
5.5
2.538
V
1.827
0.711
V
0.711
V
2.030
219
273
ns
389
571

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