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Panasonic MAS3795EG Specification Sheet page 2

Schottky barrier diodes (sbd) silicon epitaxial planar type

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MAS3795EG
 V
I
F
F
3
10
75°C 25°C
2
10
= 125°C
T
–20°C
a
10
1
−1
10
−2
10
0
0.4
0.8
1.2
1.6
Forward voltage V
 T
I
R
a
4
10
3
10
2
10
10
1
−1
10
−40
0
40
80
120
Ambient temperature T
2
This product complies with the RoHS Directive (EU 2002/95/EC).
4
10
3
10
2
10
10
1
−1
10
2.0
2.4
0
( V )
F
3.0
= 25 V
V
R
2.5
3 V
1 V
2.0
1.5
1.0
0.5
0
0
160
200
( °C )
a
 V
I
R
R
= 125°C
T
a
75°C
25°C
5
10
15
20
25
30
Reverse voltage V
( V )
R
 V
C
t
R
f = 1 MHz
= 25°C
T
a
5
10
15
20
25
30
( V )
Reverse voltage V
R
SKH00219AED
 T
V
F
a
1.0
0.8
= 30 mA
I
F
0.6
10 mA
0.4
0.2
1 mA
0
−40
0
40
80
120
160
( °C )
Ambient temperature T
a
200

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