Panasonic MA3X715 (MA715) Specification Sheet

Schottky Barrier Diodes (SBD)
MA3X715
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Low forward voltage V
• Optimum for high frequency rectification because of its short
reverse recovery time t
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current Single
Series
Peak forward Single
current Series
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
Pulse Generator
(PG-10N)
R
s
Publication date: February 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA715)
F
rr
= 25°C
a
Symbol Rating
V 30
R
V 30
RM
I 30
F
20
I 150
FM
110
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F1 F
V I
F2 F
I V
R
C V
t
t I
rr F
I
rr
η
V
R
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω = 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
mA
EIAJ: SC-59
mA
Marking Symbol: M2Y
Internal Connection
°C
°C
Conditions
= 1 mA
= 30 mA
= 30 V
R
= 1 V, f = 1 MHz
R
= I = 10 mA
R
= 1 mA, R = 100 Ω
L
= 3 V , f = 30 MHz
IN (peak)
= 3.9 kΩ, C = 10 pF
L
4. * : t measurement circuit
rr
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00075DED
+0.10
0.40
–0.05
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
3
1 2
Min Typ Max
0.3
1.0
30
1.5
1.0
65
Output Pulse
t
rr
I
F
t
= 1 mA
I
rr
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
Unit
V
µA
pF
ns
%
1