Panasonic MA3X789 (MA789) Specification Sheet

Schottky Barrier Diodes (SBD)
MA3X789
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• Forward current (Average) I
possible
• Reverse voltage V = 60 V is guaranteed
R
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 100 MHz.
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA789)
= 500 mA rectification is
F(AV)
= 25°C
a
Symbol Rating
V 60
R
V 60
RM
I 500
F(AV)
I 2
FSM
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
= 500 mA
V I
F F
= 50 V
I V
R R
= 0 V, f = 1 MHz
C V
t R
= I
t I
rr F
= 0.1 I
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
SKH00089CED
10˚
Unit
V
V
mA
EIAJ: SC-59
A
Marking Symbol: M3W
°C
Internal Connection
°C
Conditions
= 100 mA
R
= 100 Ω
, R
R L
4. * : t measurement circuit
rr
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
+0.10
0.40
–0.05
0.16
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
Mini3-G1 Package
3
1 2
Min Typ Max
0.65
100
60
4.5
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr R
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.10
–0.06
1: Anode
2: N.C.
3: Cathode
Unit
V
µA
pF
ns
1