Panasonic Schottky Barrier Diodes MA3X721 (MA721) Specifications

Schottky Barrier Diodes (SBD)
MA3X721
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• Forward current (Average) I
possible
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
4. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA721)
= 200 mA rectification is
F(AV)
= 25°C
a
Symbol Rating
V 30
R
V 30
RM
I 200
F
I 300
FM
I 1
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
R
C V
t
t I
rr F
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω = 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
mA
mA
EIAJ: SC-59
A
Marking Symbol: M1M
°C
°C
Internal Connection
Conditions
= 200 mA
= 30 V
R
= 0 V, f = 1 MHz
R
= I = 100 mA
R
= 10 mA, R = 100 Ω
L
Input Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00080CED
+0.10
0.40
–0.05
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
3
1 2
Min Typ Max
0.55
50
30
3.0
Output Pulse
t
t
rr
I
F
t
= 10 mA
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
1: Anode
2: N.C.
3: Cathode
Unit
V
µA
pF
ns
1