Yaesu FT-2DR Technical Supplement page 3

Transmitter
RF Power Output:
Modulation Type:
Spurious Emission:
Receiver
Circuit Type:
Intermodiate Frequencies:
Sensitivity:
Selectivity:
AF Output:
Performance specifications are nominal, unless otherwise indicated, and are subject to change without no-
tice. Measured in accordance with TIA/EIA-603.
5 W (@ 7.2 V DC or EXT DC )
F1D, F2D, F3E : Variable Reactance modulation
F7W: 4 FSK (C4FM)
USA/EXP version
At least 60 dB below (@TX Power HI, L3)
At least 50 dB below (@TX Power L2, L1)
European version
At least 60 dB below (@TX Power HI, L3, L2)
At least -36 dBm below (@TX Power L1)
Double-Conversion Super heterodyne (NFM, AM)
Single-Conversion Super heterodyne (AM/FM Radio)
1 st: 47.25 MHz (AM, NFM A Band)
1 st: 46.35 MHz (AM, NFM B Band)
2 nd: 450 kHz (AM, NFM)
3 μV for 10 dB SN (0.5 - 30 MHz, @AM)
0.35 μV TYP for 12 dB SINAD (30 - 54 MHz, @NFM)
1 μV TYP for 12 dB SINAD (54 - 76 (88) MHz, @NFM)
1.5 μV TYP for 12 dB SINAD (76 (88) - 108 MHz, @WFM)
1.5 μV TYP for 10 dB SN (108 - 137 MHz, @AM)
0.2 μV for 12 dB SINAD (137 - 140 MHz, @NFM)
0.16 μV for 12 dB SINAD (140 - 150 MHz, @NFM)
0.2 μV for 12 dB SINAD (150 - 174 MHz, @NFM)
1 μV for 12 dB SINAD (174 - 222 MHz, @NFM)
0.5 μV for 12 dB SINAD (300 - 350 MHz, @NFM)
0.2 μV for 12 dB SINAD (350 - 400 MHz, @NFM)
0.18 μV for 12 dB SINAD (400 - 470 MHz, @NFM)
1.5 μV for 12 dB SINAD (470 - 540 MHz, @NFM)
3 μV TYP for 12 dB SINAD (540 - 800 MHz, @NFM)
1.5 μV TYP for 12 dB SINAD (800 - 999 MHz, @NFM, Cellular Blocked)
0.19 μV TYP for BER 1 % (Digital Mode)
NFM, AM 12 kHz / 35 kHz (–6 dB / –60 dB)
700 mW (8 Ω for 10 % THD 7.2 V) internal speaker
300 mW (8 Ω for 10 % THD 7.2 V) external speaker
SPECIFICATIONS-2
Specifications
FT2DR/DE Technical Supplement