Eeprom Data Write; Ddc2B Command.(A0/A1 - LG 31MU97 Service Manual

5.5. EEPROM Data Write

5.5.1 Siganl TABLE
LEN : 84h+Bytes
CMD : E8h
ADH : E2PROM Slave Address(A0,A2,A4,A6,A8,AA,AC,AE),
Not 00h(Reserved by Buffer To EEPROM)
ADL : E2PROM Sub Address(00~FF)
Data : Write data
Delay : 20ms
5.5.2. Command Set
No. Adjustment CMD(hex)
contents
1 E E P R O M E8
WRITE
2
* Use
■ FOS Default write :
<14mode data> write
SyncFlags,HPeriodH, HPeriodL, VtotalH,VtotalL,
SrcHTotalH, SrcHTotalL
SrcHStartH, SrcHStartL, SrcVStartH,SrcVStartL,
HsyncPhase
■ Temporary Data write: Write to particular address of
EEPROM.
Copyright © LG Electronics. Inc. All rights reserved.
Only for training and service purposes
LEN Explanation
94 16-Byte Write
(84+n) n-byte Write
5.6. E PROM Data Read
2
5.6.1. Signal TABLE
5.6.2. COMMAND SET
No. Adjustment CMD
contents (hex)
1 EEPROM E7
READ
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
5.6.3. Use
Read E2PROM's specific area as unit of 128(80h)-byte. (84h)
5.6.4 EDID Write
EEPROM access by using DDC2B protocol
■ 1-Byte write
L : 0x00~0x7F
D : data
■ 8-byte write
L : 0x00,0x10,....0x70
5.6.5. EDID Read

- DDC2B Command.(A0/A1)

- 128 Byte transfer of EDID Buffer of MICOM
- 8 -
ADH ADL Explanation
(hex) (hex)
A0 0 0-Page 0~7F Read
80 0-Page 80~FF Read
A2 0 1-Page 0~7F Read
80 1-Page 80~FF Read
A4 0 2-Page 0~7F Read
80 2-Page 80~FF Read
A6 0 3-Page 0~7F Read
80 3-Page 80~FF Read
A8 0 4-Page 0~7F Read
80 4-Page 80~FF Read
AA 0 5-Page 0~7F Read
80 5-Page 80~FF Read
AC 0 6-Page 0~7F Read
80 6-Page 80~FF Read
AE 0 7-Page 0~7F Read
80 7-Page 80~FF Read
LGE Internal Use Only