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MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
1.2 Ordering Information
Samsung
MuxOneNAND Memory
Device Type
M : Single Chip
N : Dual Chip
Density
2G : 2Gb
4G : 4Gb
Organization
16 : x16 Organization
Operating Voltage Range
Q : 1.8V(1.7 V to 1.95V)
1.3 Architectural Benefits
MuxOneNAND is a highly integrated non-volatile memory solution based around a NAND Flash memory array.
The chip integrates system features including:
• A BootRAM and bootloader
• Two independent bi-directional 2KB DataRAM buffers
• A High-Speed x16 Host Interface
• On-chip Error Correction
• On-chip NOR interface controller
This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in applications that
would otherwise have to use more NOR components.
MuxOneNAND takes advantage of the higher performance NAND program time, low power, and high density and combines it with the syn-
chronous read performance of NOR. The NOR Flash host interface makes MuxOneNAND an ideal solution for applications like G3 Smart
Phones, Camera Phones, and mobile applications that have large, advanced multimedia applications and operating systems, but lack a
NAND controller.
When integrated into a Samsung Multi-Chip-Package with Samsung Mobile DDR SDRAM, designers can complete a high-performance,
small footprint solution.
KF X XX 16 Q 2 A - D E X X
Operating Temperature Range
E : Extended Temp. (-30 °C to 85 °C)
- 5 -
FLASH MEMORY
Speed
6 : 66MHz
8 : 83MHz
Product Line designator
B : Include Bad Block
D : Daisy Sample
Package
D : FBGA(Lead Free)
Version
A : 2nd Generation
Page Architecture
2 : 2KB Page
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