Flash Memory; Revision History - Samsung MUXONENAND A-DIE KFN4G16Q2A Specification

MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)

Revision History

Document Title
MuxOneNAND
Revision History
Revision No.
0.0 1. Initial issue.
0.1 1. Corrected errata.
2. Chapter 3.3.1 Cold Reset Mode Operation revised.
3. Chapter 6.17 Cold Reset Timing revised.
4. Chapter 5.9 AC Characteristics for Load/Program/Erase Performance
revised.
0.2 1. Corrected errata.
2. Chapter 3.3 Reset Mode Operation revised.
3. Chapter 5.5 AC Characteristics for Asynchronous Read tOEH removed.
4. Chapter 5.9 AC Characteristics for Load/Program/Erase Performance
tINTW removed.
5. Chapter 6.5 Asynchronous Read (VA Transition Before AVD Low) tOEH
removed.
6. Chapter 6.6 Asynchronous Read (VA Transition After AVD Low) tOEH
removed.
7. Chapter 6.12 Program Operation Timing tINTW removed.
8. Chapter 6.16 Block Erase Operation Timing tINTW removed.
1.0 1. Corrected errata.
1.1 1. Chapter 1.4 Product Features revised.
2. Chapter 2.8.4 Version ID Register F002h revised.
3. Chapter 2.8.22 Interrupt Status Register F241h (R/W) revised.
4. Chapter 3.4.4 Data Protection Operation Flow Diagram revised.
5. Chapter 3.4.4 All Block Unlock Flow Diagram revised.
6. Chapter 5.8 AC Characteristics for Burst Write Operation revised.
1.11 1. Chapter 2.8.21 : Description of OTP Lock status and 1st block OTP Lock
status revised.
2. Chapter 3.6 Load Operation Flow Chart Diagram revised.
3. Chapter 3.8 Cache Read Flow Chart revised.
4. Chapter 3.9.5 Synchronous Burst Block Read Operation Flow Chart
revised.
5. Chapter 3.12 Copy-Back Program Operation Flow Chart revised.
6. Chapter 3.12.1 Copy-Back Program Operation with Random Data Input
Flow Chart revised.
7. Chapter 3.13.1 Block Erase Operation Flow Chart revised.
8. Chapter 3.13.3 Multi Block Erase/ Multi Block Erase Verify Read Flow
Chart revised.
9. Chapter 3.13.4 Erase Suspend and Erase Resume Operation Flow Chart
revised.
10. Chapter 3.14.1 OTP Block Read Operation Flow Chart revised.
11. Chapter 3.14.2 OTP Block Program Operation Flow Chart revised.
12. Chapter 3.14.3 OTP Block Lock Operation Flow Chart revised.
13. Chapter 3.14.4 1st Block OTP Lock Operation Flow Chart revised.
14. Chapter 3.14.5 OTP and 1st Block OTP Lock Operation Flow Chart
revised.
1. Chapter 2.4 Pin Description revised.
1.2
2. Chapter 3.4.3.1 Unlocked NAND Array Write Protection State revised.
3. Chapter 3.4.3.3 Locked-tight NAND Array Write Protection State revised.
4. Chapter 3.4.4 All Block Unlock Flow Diagram revised.
5. Chapter 7.1.3 Determining Rp Value revised.
History
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FLASH MEMORY

Draft Date Remark
Jul. 13, 2007 Advanced
Sep. 06, 2007 Preliminary
Oct. 26, 2007 Preliminary
Dec. 13, 2007 Final
Mar. 27, 2008 Final
Apr. 07, 2008 Final
Dec. 09, 2008 Final