P-Channel Enhancement Mode Field Effect Transistor; Ao4459 - THOMSON 22E92NH22 Service Manual

AO4459

P-Channel Enhancement Mode Field Effect Transistor

General Description
The AO4459 uses advanced trench technology to provide
excellent R with low gate charge. This device is suitable
DS(ON)
for use as a load switch or in PWM applications. Standard
product AO4459 is Pb-free (meets ROHS & Sony 259
specifications). AO4459L is a Green Product ordering
option. AO4459 and AO4459L are electrically identical .
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain T =25°C
A
A
Current
T =70°C
A
B
Pulsed Drain Current
T =25°C
A
A
Power Dissipation
T =70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
SOIC-8
Top View
S D
S D
S D
G D
=25°C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T , T
J STG
A
t ≤ 10s
A
Steady-State
C
Steady-State
Features
V (V) = -30V
DS
I = -6.5A (V = -10V)
D GS
R < 46mΩ (V = -10V)
DS(ON) GS
R < 72mΩ (V = -4.5V)
DS(ON) GS
D
G
S
Maximum
-30
±20
-6.5
-5.3
-30
3.1
2
-55 to 150
Symbol Typ
33
R
θJA
62
R
18
θJL
Units
V
V
A
W
°C
Max Units
40 °C/W
75 °C/W
24 °C/W