Philips CE130/55 Service Manual page 43

FEDD56V16160F-02
1 Semiconductor
MSM56V16160F
2-Bank × × × × 524,288-Word × × × × 16-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in
Oki's silicon-gate CMOS technology. The device operates at 3.3V. The inputs and outputs are LVTTL
compatible.
FEATURES
Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
∙
× 524,288-word × 16-bit configuration
∙ 2-Bank
Single 3.3V power supply, ±0.3V tolerance
∙
Input : LVTTL compatible
∙
Output : LVTTL compatible
∙
Refresh : 4096 cycles/64ms
∙
Programmable data transfer mode
∙
- CAS Latency (1,2,3)
- Burst Length (1,2,4,8,Full Page)
- Data scramble (sequential, interleave)
CBR auto-refresh, Self-refresh capability
∙
∙ Packages:
50-pin 400mil plastic TSOP (Type II) (TSOPII50-P-400-0.80-1K) (Product : MSM56V16160F-xxTS-K)
PRODUCT FAMILY
Family
MSM56V16160F-8
MSM56V16160F-10
Max.
Frequency
125MHz
100MHz
This version: March. 2001
Previous version : January. 2001
xx indicates speed rank.
Access Time (Max.)
t t
AC2 AC3
9ns 6ns
9ns 9ns
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