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Philips Semiconductors
TOPFET dual high side switch
SWITCHING CHARACTERISTICS
T
= 25 ˚C, V
= 13 V, for resistive load R
mb
BG
SYMBOL PARAMETER
During turn-on
t
Delay time
d on
dV/dt
Rate of rise of load voltage
on
t
Total switching time
on
During turn-off
t
Delay time
d off
dV/dt
Rate of fall of load voltage
off
t
Total switching time
off
CAPACITANCES
T
= 25 ˚C; f = 1 MHz; V
mb
SYMBOL PARAMETER
C
Status capacitance
sg
per channel
C
Input capacitance
ig
C
Output capacitance
bl
October 2001
= 13
L
CONDITIONS
from input going high
to 10% V
30% to 70% V
to 90% V
from input going low
to 90% V
70% to 30% V
to 10% V
= 0 V
IG
CONDITIONS
V
SG
V
BG
V
BL
per channel.
L
L
L
L
L
L
= 5 V
= 13 V
= 13 V
7
Product specification
BUK218-50DC
MIN.
TYP.
MAX.
-
30
-
0.5
1
2
-
100
400
-
20
-
0.5
1
2
-
40
200
MIN.
TYP.
MAX.
-
11
15
-
15
20
-
265
375
Rev 2.010
UNIT
s
V/ s
s
s
V/ s
s
UNIT
pF
pF
pF
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