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Philips Semiconductors
TOPFET dual high side switch
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C
T
mb
SYMBOL PARAMETER
Undervoltage
V
Low supply threshold voltage
BG(UV)
V
Hysteresis
BG(UV)
Overvoltage
V
High supply threshold voltage
BG(OV)
V
Hysteresis
BG(OV)
I
Operating current per channel
BG(OV)
OVERLOAD PROTECTION CHARACTERISTICS
Independent protection per channel. Refer to
5.5 V
V
35 V, limits are at -40˚C
BG
SYMBOL PARAMETER
Overload protection
I
Load current limiting
L(lim)
Short circuit load protection
P
Overload power threshold
D(TO)
T
Characteristic time
DSC
Overtemperature protection
T
Threshold junction temperature
j(TO)
T
Hysteresis
j(TO)
1 Undervoltage sensors causes each channel to switch off and reset.
2 Overvoltage sensors causes each output channel to switch off to protect its load.
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4 Normal operation will be resumed when P
5 Trip time t
varies with overload dissipation P
d sc
6 After cooling below the reset temperature the channel will resume normal operation.
October 2001
150˚C and typicals at T
CONDITIONS
1
2
V
TRUTH TABLE
T
150˚C and typicals at T
mb
CONDITIONS
V
V
V
T
for protection
which determines trip time
6
< P
and T
D
D(TO)
j
according to the exponential model formula t
D
= 25˚C. Refer to
TRUTH TABLE
mb
> V
BG
BG(OV)
.
mb
= V
; t
= 300 s
BL
BG
p
8 V
BG
= 5.5 V
BG
125˚C prior to overload
mb
4
< T
.
j(TO)
5
BUK218-50DC
.
MIN.
TYP.
2
4.2
0.1
0.5
35
40
0.4
1
-
1
= 25˚C unless otherwise stated.
MIN.
TYP.
18
30
15
27
3
100
150
5
-
200
150
170
3
10
T
/ LN[ P
/ P
d sc
DSC
D
D(TO)
Product specification
MAX.
UNIT
5.3
V
1
V
45
V
2
V
2
mA
MAX.
UNIT
42
A
42
A
200
W
500
s
190
˚C
20
˚C
].
Rev 2.010
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