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Philips Semiconductors
2
6 W hi-fi audio power amplifier
SYMBOL
Operating position; note 6
I
total quiescent current
q(tot)
P
output power
O
THD
total harmonic distortion
B
power bandwidth
G
voltage gain
v
G
gain unbalance
v
V
noise output voltage
no
Z
input impedance
i
SVRR
supply voltage ripple rejection
channel separation
cs
M
(I
UTE POSITION
MUTE
V
output voltage
O
Z
mute input impedance
2 7
I
total quiescent current
q(tot)
V
noise output voltage
no
SVRR
supply voltage ripple rejection
V
offset voltage with respect to operating
off
position
I
current if pin 2 is connected to pin 5
2
Notes
1. V
= 12 V; R
= 8 ; T
P
L
2. The power bandwidth is measured at a maximum output power (P
3. The noise output voltage (RMS value) is measured at R
4. The ripple rejection is measured at R
to the positive and the negative supply rails. With asymmetrical power supplies, the ripple rejection is measured at
f
= 1 kHz.
i
5.
V
= 4 V; R
= 8 ; T
P
L
6. V
= 24 V; R
= 8 ; T
P
L
7. The internal network at pin 2 is a resistor divider of typical 4 k and 5 k to the positive supply rail. At the connection
of the 4 k and 5 k resistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread
of the zener voltage is 6.1 to 7.1 V.
1995 May 08
PARAMETER
300 A)
= 25 C; f
= 1 kHz; symmetrical power supply I
amb
i
= 0 and f
S
= 25 C; f
= 1 kHz; symmetrical power supply (see Fig.4).
amb
i
= 25 C; f
= 1 kHz; asymmetrical power supply I
amb
i
CONDITIONS
THD = 0.5%
THD = 10%
P
= 4 W
O
THD = 0.5%; note 1
note 3
V
= 600 mV
I
note 7
note 3
note 4
Omax
= 2 k , unweighted (20 Hz to 20 kHz).
S
= 100 Hz to 20 kHz. The ripple voltage (200 mV) is applied in phase
i
7
MIN.
TYP.
18
40
5
6
6.5
8
0.13
40 to 20000
29
30
0.2
70
14
20
35
44
45
0.3
6.7
9
18
40
70
35
44
4
=
30 A (see Fig.4).
MUTE
) of 3 dB.
30 A (see Fig.5).
MUTE
Product specification
TDA2615
MAX.
UNIT
70
mA
W
W
0.2
%
Hz
31
dB
1
dB
140
V
26
k
dB
dB
1.0
mV
11.3
k
70
mA
140
V
dB
150
mV
6
mA
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