Philips Semiconductors
CMOS digital decoding IC with RAM for
Compact Disc
SYMBOL
PARAMETER
3-state outputs MISC, SCLK, WCLK, DATA and CL11
V
LOW level output voltage
OL
V
HIGH level output voltage
OH
C
load capacitance
L
t
output rise time
r
t
output fall time
f
I
3-state leakage current
LI
3-state outputs MOTO1, MOTO2 and DOBM
V
LOW level output voltage
OL
V
HIGH level output voltage
OH
C
load capacitance
L
t
output rise time
r
t
output fall time
f
I
3-state leakage current
LI
Digital input/output DA
V
LOW level input voltage
IL
V
HIGH level input voltage
IH
I
3-state leakage current
LI
C
input capacitance
I
V
LOW level output voltage
OL
V
HIGH level output voltage
OH
C
load capacitance
L
t
output rise time
r
t
output fall time
f
Crystal oscillator input CRIN (external clock)
g
mutual conductance at start-up
m
R
output resistance at start-up
O
C
input capacitance
I
I
input leakage current
LI
Crystal oscillator output CROUT (see Fig.26)
f
crystal frequency
xtal
C
feedback capacitance
fb
C
output capacitance
O
1998 Feb 16
CONDITIONS
I
= 1 mA
OL
I
= 1 mA
OH
C
= 20 pF; note 1
L
C
= 20 pF; note 1
L
V
= 0 to V
I
DD
V
= 4.5 to 5.5 V;
DD
I
= 10 mA
OL
V
= 3.4 to 5.5 V;
DD
I
= 5 mA
OL
V
= 4.5 to 5.5 V;
DD
I
= 10 mA
OH
V
= 3.4 to 5.5 V;
DD
I
= 5 mA
OH
C
= 20 pF; note 1
L
C
= 20 pF; note 1
L
V
= 0 to V
I
DD
V
= 0 to V
I
DD
I
= 1 mA
OL
I
= 1 mA
OH
C
= 20 pF; note 1
L
C
= 20 pF; note 1
L
28
MIN.
TYP.
0
V
0.4
DD
10
0
0
V
1
DD
V
1
DD
10
0.3
0.7V
DD
10
0
V
0.4
DD
4
11
10
8
16.9344
Product specification
SAA7345
MAX.
UNIT
0.4
V
V
V
DD
50
pF
15
ns
15
ns
+10
A
1.0
V
1.0
V
V
V
DD
V
V
DD
50
pF
10
ns
10
ns
+10
A
0.3V
V
DD
V
+ 0.3 V
DD
+10
A
10
pF
0.4
V
V
V
DD
50
pF
15
ns
15
ns
mS
k
10
pF
+10
A
35
MHz
5
pF
10
pF