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Panasonic Transistors 2SC2480 Specifications page 3

Transistors silicon npn epitaxial planar type

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This product complies with the RoHS Directive (EU 2002/95/EC).
 I
Z
rb
E
120
V
CB
f = 2 MHz
= 25°C
T
a
100
80
60
40
20
0
− 0.1
−1
Emitter current I
(mA)
E
 g
b
ib
ib
0
= g
y
ib
= 10 V
V
CB
−10
−20
= −2 mA
I
E
f = 900 MHz
−5 mA
−30
600
500
300
−40
−50
−60
0
10
20
30
40
Input conductance g
(mS)
ib
 g
b
ob
ob
12
= g
+ jb
y
ob
ob
ob
= 10 V
V
CE
10
600
8
= −2 mA
−5 mA
I
E
500
6
4
300
2
f = 200 MHz
0
0
0.4
0.8
1.2
1.6
Output conductance g
(mS)
ob
40
= 10 V
35
30
25
20
15
10
5
0
−10
− 0.1
Emitter current I
0
+ jb
= g
+ jb
y
ib
ib
rb
rb
= 10 V
V
CB
− 0.4
− 0.8
−1.2
200
−1.6
−2.0
−2.4
−1.0
− 0.8
50
Reverse transfer conductance g
900
2.0
SJC00116CED
 I
G
P
E
= 10 V
V
CB
f = 100 MHz
= 50 Ω
R
g
= 25°C
T
a
−1
−10
−100
(mA)
E
 g
b
rb
rb
200
rb
300
500
600
f = 900 MHz
−2 mA
= −5 mA
I
E
− 0.6
− 0.4
− 0.2
0
(mS)
rb
2SC2480
NF  I
E
12
= 10 V
V
CB
f = 100 MHz
= 50 kΩ
R
10
g
= 25°C
T
a
8
6
4
2
0
− 0.1
−1
−10
Emitter current I
(mA)
E
 g
b
fb
fb
48
= g
y
fb
fb
= 10 V
V
CB
40
f = 200 MHz
= −5 mA
I
E
32
300
−2 mA
24
16
900
8
0
−60
−40
−20
0
20
Forward transfer conductance g
−100
+ jb
fb
500
600
40
(mS)
fb
3

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