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Panasonic Transistors 2SC2480 Specifications page 2

Transistors silicon npn epitaxial planar type

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2SC2480
 T
P
C
a
240
200
160
120
80
40
0
0
40
80
Ambient temperature T
 V
I
B
BE
400
350
300
250
200
150
100
50
0
0
0.4
0.8
1.2
Base-emitter voltage V
 I
V
CE(sat)
100
10
1
= 75°C
T
a
25°C
0.1
0.01
0.1
1
10
Collector current I
C
2
This product complies with the RoHS Directive (EU 2002/95/EC).
24
20
16
12
8
4
0
0
120
160
Collector-emitter voltage V
(°C)
a
60
= 10 V
V
CE
= 25°C
T
a
50
40
30
20
10
0
0
1.6
2.0
Base-emitter voltage V
(V)
BE
C
1 600
/ I
= 10
I
C
B
1 400
1 200
1 000
800
600
400
–25°C
200
0
− 0.1
100
(mA)
 V
I
C
CE
= 25°C
T
a
= 300 µA
I
B
250 µA
200 µA
150 µA
100 µA
50 µA
4
8
12
16
(V)
CE
 V
I
C
BE
= 10 V
V
25°C
CE
= 75°C
−25°C
T
a
0.4
0.8
1.2
1.6
2.0
(V)
BE
 I
f
T
E
= 10 V
V
CB
= 25°C
T
a
−1
−10
−100
Emitter current I
(mA)
E
SJC00116CED
 I
I
C
B
24
V
CE
T
a
20
16
12
8
4
0
0
100
200
300
400
Base current I
(µA)
B
 I
h
FE
C
240
V
CE
200
160
= 75°C
T
a
120
25°C
−25°C
80
40
0
0.1
1
10
Collector current I
(mA)
C
 V
C
re
CE
2.4
= 1 mA
I
C
f = 10.7 MHz
= 25°C
T
a
2.0
1.6
1.2
0.8
0.4
0
0.1
1
10
Collector-emitter voltage V
= 10 V
= 25°C
500
= 10 V
100
100
(V)
CE

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