Transistors
2SC3931G
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
Transition frequency
Common-emitter reverse transfer
capacitance
Power gain
Noise figure
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: April 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol
Rating
V
30
CBO
V
20
CEO
V
EBO
I
15
C
P
150
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
CBO
C
V
I
EBO
E
V
V
BE
CB
*
h
V
FE
CB
f
V
T
CB
C
V
re
CB
G
V
P
CB
NF
V
CB
C
D
65 to 160
100 to 260
Unit
V
V
3
V
mA
mW
°C
°C
Conditions
= 10 µA, I
= 0
E
= 10 µA, I
= 0
C
= 6 V, I
= −1 mA
E
= 6 V, I
= −1 mA
E
= 6 V, I
= −1 mA, f = 200 MHz
E
= 6 V, I
= −1 mA, f = 10.7 MHz
E
= 6 V, I
= −1 mA, f = 100 MHz
E
= 6 V, I
= −1 mA, f = 100 MHz
E
SJC00358AED
■ Package
• Code
SMini3-F2
• Marking Symbol: U
• Pin Name
1. Base
2. Emitter
3. Collector
Min
Typ
Max
30
3
720
65
260
450
650
0.8
1.0
24
3.3
Unit
V
V
mV
MHz
pF
dB
dB
1