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Panasonic Schottky Barrier Diodes MA3J745EG Specifications page 2

Schottky barrier diodes (sbd) silicon epitaxial planar type

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MA3J745EG
I
 V
F
10
3
75°C 25°C
10
2
T
= 125°C
−20°C
a
10
1
10
–1
10
–2
0
0.4
0.8
1.2
Forward voltage V
I
 T
R
10
4
10
3
10
2
10
1
10
−1
−40
0
40
80
Ambient temperature T
2
This product complies with the RoHS Directive (EU 2002/95/EC).
F
10
4
10
3
10
2
10
1
10
−1
1.6
2.0
2.4
0
( V )
F
a
3.2
V
= 30 V
R
3 V
2.4
1 V
1.6
0.8
0
120
160
200
0
( °C )
a
I
 V
R
R
T
= 125°C
a
75°C
25°C
5
10
15
20
25
30
( V )
Reverse voltage V
R
C
 V
t
R
f = 1 MHz
T
= 25°C
a
10
20
30
Reverse voltage V
( V )
R
SKH00234AED
V
 T
F
a
1.0
0.8
I
= 30 mA
F
0.6
10 mA
0.4
0.2
0
−40
0
40
80
120
( °C )
Ambient temperature T
a
I
 T
F(AV)
a
50
T
= 125 °C
j
I
F
t
p
40
T
DC
30
20
10
0
0
40
80
120
Terminal capacitance T
(°C)
a
1 mA
160
160

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