Schottky Barrier Diodes (SBD)
MA3X716
Silicon epitaxial planar type
For switching
For wave detection
■ Features
• Two MA3X704A (MA704A) is contained in one package
(series connection)
• Low forward voltage V
, optimum for low voltage rectification
F
• Optimum for high frequency rectification because of its short
reverse recovery time (t
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Peak forward current
Single
Series
Forward current
Single
Series
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: February 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA716)
)
rr
= 25°C
a
Symbol
Rating
V
30
R
V
30
RM
I
150
FM
110
I
30
F
20
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
= 1 mA
V
I
F1
F
= 30 mA
V
I
F2
F
I
V
R
R
C
V
t
R
= I
t
I
rr
F
I
rr
η
V
IN
R
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
Unit
V
EIAJ: SC-59
V
Marking Symbol: M1U
mA
Internal Connection
mA
°C
°C
Conditions
= 30 V
= 1 V, f = 1 MHz
= 10 mA
R
= 1 mA, R
= 100 Ω
L
= 3 V
, f = 30 MHz
(peak)
= 3.9 kΩ, C
= 10 pF
L
4. * : t
measurement circuit
rr
Input Pulse
t
t
r
p
t
10%
I
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00076DED
+0.10
0.40
–0.05
3
1
2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
3
1
2
Min
Typ
Max
1.5
1.0
65
Output Pulse
t
rr
F
t
= 1 mA
I
rr
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
Unit
0.4
V
1.0
µA
1
pF
ns
%
1