Zener Diodes
MAZQxxx Series
Silicon planar type
For constant voltage, constant current, waveform clipper and surge
absorption circuit
Features
Optimum for high-density mounting
Low noise type
Absolute Maximum Ratings T
Parameter
Repetitive peak forward current
Total power dissipation
*
Junction temperature
Storage temperature
Note) * : P
= 120 mW achieved with a printed circuit board.
T
Electrical Characteristics T
Parameter
Forward current
Zener voltage
*
Zene operating resistance
Reverse current
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. The temperature must be controlled 25°C for V
4. * : V
guaranted 20 ms after current flow.
Z
Electrical Characteristics within Part Numbers T
Part number
Min
MAZQ062
MAZQ068
MAZQ100
9.40
MAZQ200
18.80
MAZQ300
28.00
Publication date: January 2009
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
I
200
FRM
P
120
T
T
150
j
T
-55 to +150
stg
= 25°C±3°C
a
Symbol
V
I
= 10 mA
F
F
V
I
Z
Z
R
I
Z
Z
I
V
R
R
mesurement. V
Z
Zener voltage
V
(V)
Z
Typ
Max
5.8
6.2
6.6
6.4
6.8
7.2
10.00
10.60
20.00
21.20
30.00
32.00
Package
Code
Pin Name
Unit
Marking Symbol
mA
mW
°C
°C
Conditions
Specified value
Specified value
Specified value
value measured at other temperature must be adjusted to V
Z
= 25°C±3°C
a
Zener
operating
resistance
R
(W)
Z
I
I
Z
Z
Max
(mA)
(mA)
5
30
5
5
20
5
5
30
5
5
80
5
2
160
2
SKE00030CED
USSMini2-F1
1: Anode
2: Cathode
Refer to the list of the electrical characteristics
within part numbers
Min
Typ
Max
0.9
1.0
Refer to the list of the
electrical characteristics
within part numbers
Reverse current
I
( mA)
R
Marking symbol
V
R
Max
(V)
0.2
4.0
0.1
4.0
0.05
7
0.05
15.0
0.05
23.0
Unit
V
V
W
mA
(25°C)
Z
E
F
L
V
Y
1