Schottky Barrier Diodes (SBD)
MA3X727
Silicon epitaxial planar type
For super high speed switching
For small current rectification
Features
Reverse voltage V
50 V is guaranteed
R
Forward current (Average) I
possible
Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Peak forward current
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
Pulse Generator
(PG-10N)
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA727)
200 mA rectification is
F(AV)
25 C
a
Symbol
Rating
V
50
R
V
50
RRM
I
300
FM
I
200
F(AV)
I
1
FSM
T
150
j
T
55 to 150
stg
25 C 3 C
a
Symbol
V
I
F1
F
V
I
F2
F
I
V
R
R
C
V
t
R
t
I
rr
F
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
50
R
50
i
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
mA
EIAJ: SC-59
mA
Marking Symbol: M1Z
A
Internal Connection
C
C
Conditions
30 mA
200 mA
50 V
0 V, f
1 MHz
I
100 mA
R
10 mA, R
100
L
4. * : t
measurement circuit
rr
Input Pulse
t
t
p
r
t
10%
I
90%
V
R
t
2 s
p
t
0.35 ns
r
0.05
SKH00082CED
+0.10
0.40
–0.05
3
1
2
(0.95) (0.95)
1.9
0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
3
1
2
Min
Typ
Max
0.36
0.55
200
30
3.0
Output Pulse
t
rr
F
t
I
10 mA
rr
I
100 mA
F
I
100 mA
R
R
100
L
Unit: mm
+0.10
0.16
–0.06
1: Anode
2: N.C.
3: Cathode
Unit
V
V
A
pF
ns
1