Panasonic MAZTxxxH Series Specifications

Zener Diodes
MAZTxxxH Series
Silicon planar type
For surge absorption circuit
■ Features
• Two elements anode-common type
• Power dissipation P
: 150 mW
D
■ Absolute Maximum Ratings T
Parameter
*
Power dissipation
Junction temperature
Storage temperature
Note) * : P = 150 mW achieved with a printed circuit board.
D
■ Common Electrical Characteristics T
Parameter
*
Zener voltage
Zener rise operating resistance
Zener operating resistance
Reverse current
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage: ±10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for V
V value measured at other temperature must be adjusted to V
Z
V guaranted 20 ms after current flow.
Z
Publication date: August 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
P 150
D
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
Z Z
R I
ZK Z
R I
Z Z
I V
R
■ Package
• Pin Name
• Pin Name
Unit
■ Marking Symbol
mW
°C
°C
■ Internal Connection
Conditions
Specified value
Specified value
Specified value
Specified value
R
mesurement.
Z
(25°C)
Z
SKE00013FED
SSMini3-F2
1: Cathode 1
2: Cathode 2
3: Anode
Refer to the list of the electrical characteristics
within part numbers
3
1 2
Min Typ
Refer to the list of the
electrical characteristics
within part numbers
Max Unit
V
Ω
Ω
µA
1