Panasonic MAZ9xxxH Series Specifications

Zener Diodes
MAZ9xxxH Series
Silicon planar type
For surge absorption circuit
■ Features
• Two elements anode-common type
• Power dissipation P
: 200 mW
D
■ Absolute Maximum Ratings T
Parameter
*
Power dissipation
Junction temperature
Storage temperature
Note) * : P = 200 mW achieved with a printed circuit board.
D
■ Common Electrical Characteristics T
Parameter
*
Zener voltage
Zener rise operating resistance
Zener operating resistance
Reverse current
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage: ±10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for V
V value measured at other temperature must be adjusted to V
Z
V guaranted 20 ms after current flow.
Z
Publication date: November 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
P 200
D
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
Z Z
R I
ZK Z
R I
Z Z
I V
R R
SKE00008DED
10˚
Unit
mW
°C
°C
EIAJ: SC-59
Internal Connection
Conditions
Specified value
Specified value
Specified value
Specified value
mesurement.
Z
(25°C)
Z
+0.10
0.40
–0.05
0.16
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
Mini3-G1 Package
3
1 2
Min Typ Max
Refer to the list of the
electrical characteristics
within part numbers
Unit: mm
+0.10
–0.06
1: Cathode 1
2: Cathode 2
3: Anode
Unit
V
Ω
Ω
µA
1