Panasonic MA3S133 (MA133) Specifications

Switching Diodes
MA3S133
Silicon epitaxial planar type
For switching circuits
■ Features
• Two isolated elements contained in one package, allowing high-
density mounting
• Two diodes are connected in series in the package
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current Single
Series
Single
Peak forward
current
Series
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
* 3
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * 1: Between pins 2 and 3
* 2: Between pins 1 and 3
* 3: t measurement circuit
rr
Publication date: February 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA133)
= 25°C
a
Symbol Rating
V 80
R
V 80
RM
I 100
F
65
I 200
FM
130
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V I
F F
= 100 µA
V I
R R
= 75 V
I V
R R
= 0 V, f = 1 MHz
* 1
C V
t R
* 2
C
t
= 10 mA, V
* 1
t I
rr F
= 0.1 I
* 2
t I
rr rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Note) The part number in the parenthesis shows conventional part number.
SKF00027CED
(0.51)
Unit
V
V
1: Anode 1
mA
2: Cathode 2
3: Cathode 1
Anode 2
mA EIAJ: SC-81
Marking Symbol: MP
°C
Internal Connection
°C
Conditions
= 6 V
R
= 100 Ω
, R
R L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
0.28 ±0.05
3
1 2
0.28 ±0.05
(0.51)
(0.80) (0.80)
+0.05
1.60
–0.03
3˚
SSMini3-F2 Package
3
1 2
Min Typ Max
1.2
80
100
5.5
3.0
150
9
Input Pulse Output Pulse
t
t
r p
t
10%
I
F
90%
V
R
= 2 µs = 10 mA
t I
p F
= 0.35 ns = 6 V
t V
r R
δ = 0.05 = 100 Ω
R
L
Unit: mm
+0.05
0.12
–0.02
+0.05
0.60
–0.03
Unit
V
V
nA
pF
ns
t
rr
t
= 0.1 I
I
rr R
1